Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Materials User Supplied | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Xactix Xenon Difluoride Etcher xactix |
All |
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1 | |||||||||||
Woollam woollam |
All |
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1 | |||||||||||
Wet Bench Resist Strip wbresstrip-1 |
Clean (Ge), Semiclean, Flexible |
20 °C - 60 °C
|
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25 4 inch wafers | ||||||||||
Wet Bench Flexible Solvents 2 wbflexsolv-2 |
Flexible |
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Wet Bench Flexible Solvents 1 wbflexsolv-1 |
Flexible |
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Wet Bench Flexible Solvents wbflexsolv |
Flexible |
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Wet Bench Flexcorr 3 wbflexcorr-3 |
Flexible |
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Wet Bench Flexcorr 2 wbflexcorr-2 |
Flexible |
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Wet Bench Flexcorr 1 wbflexcorr-1 |
|
Flexible |
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SPTS uetch vapor etch uetch |
All |
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1 | |||||||||||
SEM -Zeiss Merlin sem-merlin |
All |
0.00 mm -
35.00 mm
|
6 in wafer |
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Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
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Four 4" wafers or two 6" wafers and one 8" wafer | ||||||||||
Profilometer AlphaStep D-300 alphastep2 |
Flexible |
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1 | |||||||||||
PlasmaTherm Shuttlelock PECVD System ccp-dep |
All |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
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4 | |||||||||
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible |
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Oven 110°C post-bake oven110 |
All |
110 ºC
|
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micromanipulator6000 IV-CV probe station micromanipulator6000 |
All |
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1x4" wafer | |||||||||||
Lesker2 Sputter lesker2-sputter |
Semiclean |
1.00 μm
|
°C - 800 °C
|
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one 4 inch wafer, one 6 inch wafer | |||||||||
Lesker Sputter lesker-sputter |
Flexible |
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1 4 inch wafer, 1 6 inch wafer |