Chemical Vapor Deposition (CVD)

Chemical Vapor Deposition, CVD, is a process by which films are deposited onto a substrate by the reaction between precursors at elevated temepratures and at atmomospheric or lower pressures. Volatile precursors or their by-products are absorbed and react at the wafer surface to produce the desired films. The characteristics of the deposited film such as crystalinty, composition, quality, etc. are dependent on deposition conditions. Films typically deposited using CVD processes are, but not limited to - silicon based compounds such as silicon, silicon dioxide, silicon nitride, slicon carbide, some Germanium based films and carbon based compounds. If the deposition occurs at atmospheric pressure, then the process is referred to as APCVD and if the process pressure is lower, it is LPCVD.

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Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200		Flexible	SNF MOCVD Paul G Allen 213XA
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	All	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl orthosilicate (TEOS) which can provide a more conformal coating at lower temperature than tylanbpsg films. This is a six inch tube.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3).	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene	Flexible	C		Pieces 2" 3" 4"	1x4" wafer or Copper/Nickel foil	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	0.00 - 5.00 μm	Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄		N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200	Flexible	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	0.00 - 5.00 μm	Pieces 2" 3" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	CNT		Pieces 2" 3" 4"	1x4" wafer or multiple pieces	800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂		Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	All	Si Si3N4 SiC SiO₂ SiON	100.00 Å - 4.00 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	All	Si Si3N4 SiC SiO₂ SiON	500.00 Å - 4.00 μm	Pieces 4"	1	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Clean	SiO₂	50.00 Å - 5.00 μm	4" 6"	45	450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean	Very conformal.
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100.00 Å - 3.00 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Clean	Si3N4	100.00 Å - 2.00 μm	Pieces 2" 3" 4" 6"	44	785 °C - 850 °C	N₂ NH₃ DCS	Pre-Diffusion Clean	Stociometric and low stress (~150mPa) programs available
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100.00 Å - 3.00 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100.00 Å - 3.00 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100.00 Å - 3.00 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean

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Chemical Vapor Deposition (CVD)

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