Skip to content Skip to navigation

Oxidation and Annealing Equipment Summary

Oxidation and Annealing Equipment Summary

Oxide Growth
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Material Thickness Range Notes
Thermco1 (thermco1) Clean
Pre-Diffusion Clean 50
700 °C - 1100 °C
25 Å - 2 μm

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3 (thermco 3) Clean
Pre-Diffusion Clean 50
700 °C - 1100 °C
25 Å - 2 μm

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco4 (thermco4) Flexible
50
700 °C - 1100 °C
25 Å - 2 μm

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Furnace Annealing
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Material Thickness Range Notes
Tylanfga (tylanfga) Semiclean Standard Metal Clean 50
250 °C - 800 °C
100 Å - 100 Å

For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar...

Furnaces
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Material Thickness Range
Thermolyne (thermolyne) Flexible 25
25 °C - 1000 °C
Rapid Thermal Annealing
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Material Thickness Range
Aw610_r (aw610_r) Flexible
21 °C - 1150 °C
Aw610_l (aw610_l) Clean Pre-Diffusion Clean 1 wafer
21 °C - 1150 °C
Last modified: 30 Apr 2020