Oxidation and Annealing Equipment Summary
Oxidation and Annealing Equipment Summary
| Equipment Name | Cleanliness | Materials Lab Supplied | Material Thickness Range | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Gases | Notes |
|---|---|---|---|---|---|---|---|---|---|
| Thermco1 Oxidation Furnace (thermco1) | Clean | Silicon Dioxide |
25.00 Å -
2.00 μm
|
Pre-Diffusion Clean | 50 |
700 °C - 1100 °C
|
Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available. |
||
| Thermco3 Oxidation Furnace (thermco 3) | Clean | Silicon Dioxide |
25.00 Å -
2.00 μm
|
Pre-Diffusion Clean | 50 |
700 °C - 1100 °C
|
Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available. |
||
| Thermco4 Oxidation Furnace (thermco4) | Flexible | Silicon Dioxide |
25.00 Å -
2.00 μm
|
50 |
700 °C - 1100 °C
|
Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available. |
| Equipment Name | Cleanliness | Material Thickness Range | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Gases | Notes |
|---|---|---|---|---|---|---|---|---|
| Tylanfga Forming Gas Anneal Furnace (tylanfga) | Semiclean |
100.00 Å -
100.00 Å
|
Standard Metal Clean | 50 |
250 °C - 800 °C
|
For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar... |
| Equipment Name | Cleanliness | Material Thickness Range | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Gases |
|---|---|---|---|---|---|---|---|
| RTA AllWin 610 (aw610_r) | Flexible |
|
21 °C - 1150 °C
|
||||
| RTA AllWin 610 (aw610_l) | Clean |
|
Pre-Diffusion Clean | 1 wafer |
21 °C - 1150 °C
|
Last modified: 30 Apr 2020
