Doping Equipment Summary
Doping Equipment Summary
| Cleanliness | Substrate Size | Gases | Cleaning Required | Maximum Load | Process Temperature Range | Material Thickness Range | Notes | |
|---|---|---|---|---|---|---|---|---|
| Epi2 (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
50 Å -
3 μm
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
| ThermcoPoly1 (thermcopoly1) | Clean | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
100 Å -
3 μm
|
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs... |
||
| ThermcoPoly2 (thermcopoly2) | Flexible | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
100 Å -
3 μm
|
Standard polysilicon deposition at 620C. P and N doping available. |
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