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Doping Equipment Summary

Doping Equipment Summary

Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load Process Temperature Range Gases Cleaning Required Notes
AMAT Centurion Epitaxial System (epi2) Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

ThermcoPoly1 (thermcopoly1) Clean
100.00 Å - 3.00 μm
44
525 °C - 650 °C
Pre-Diffusion Clean

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs...

ThermcoPoly2 (thermcopoly2) Flexible
100.00 Å - 3.00 μm
44
525 °C - 650 °C
Pre-Diffusion Clean

Standard polysilicon deposition at 620C. P and N doping available.

Last modified: 30 Apr 2020