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Doping Equipment Summary

Doping Equipment Summary

Materials Lab Supplied Cleanliness Substrate Size Gases Cleaning Required Maximum Load Process Temperature Range Material Thickness Range Notes
Epi2 (epi2) Germanium, Poly Si, Silicon, Silicon Germanium Clean
Pre-Diffusion Clean 1
600 °C - 1200 °C
50 Å - 3 μm

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

ThermcoPoly1 (thermcopoly1) Germanium, Poly Si, Silicon, Silicon Germanium Clean Pre-Diffusion Clean 44
525 °C - 650 °C
100 Å - 3 μm

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs...

ThermcoPoly2 (thermcopoly2) Germanium, Poly Si, Silicon, Silicon Germanium Flexible Pre-Diffusion Clean 44
525 °C - 650 °C
100 Å - 3 μm

Standard polysilicon deposition at 620C. P and N doping available.

Last modified: 30 Apr 2020