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Doping Equipment Summary

Doping Equipment Summary

Cleanliness Substrate Size Gases Cleaning Required Maximum Load Process Temperature Range Material Thickness Range Notes
Epi2 (epi2) Clean
Pre-Diffusion Clean 1
600 °C - 1200 °C
50 Å - 3 μm

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

ThermcoPoly1 (thermcopoly1) Clean Pre-Diffusion Clean 44
525 °C - 650 °C
100 Å - 3 μm

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs...

ThermcoPoly2 (thermcopoly2) Flexible Pre-Diffusion Clean 44
525 °C - 650 °C
100 Å - 3 μm

Standard polysilicon deposition at 620C. P and N doping available.

Last modified: 30 Apr 2020