Doping Equipment Summary
Doping Equipment Summary
| Equipment Name | Cleanliness | Materials Lab Supplied | Material Thickness Range | Substrate Size | Maximum Load | Process Temperature Range | Gases | Cleaning Required | Notes |
|---|---|---|---|---|---|---|---|---|---|
| AMAT Centurion Epitaxial System (epi2) | Clean |
50.00 Å -
3.00 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
|||
| ThermcoPoly1 (thermcopoly1) | Clean |
100.00 Å -
3.00 μm
|
44 |
525 °C - 650 °C
|
Pre-Diffusion Clean |
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs... |
|||
| ThermcoPoly2 (thermcopoly2) | Flexible |
100.00 Å -
3.00 μm
|
44 |
525 °C - 650 °C
|
Pre-Diffusion Clean |
Standard polysilicon deposition at 620C. P and N doping available. |
Last modified: 30 Apr 2020
