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Silicon Dioxide

Chemical Formula: 
SiO2

There are various processing techniques to grow or deposite silicon dioxide available.

PECVD deposited silicon dioxide in the ccp system is produced by the reaction between silane (5% silane in He) and N2O. In the HDP system the reactants are silane and O2. (hdpcvd, ccp-dep)

LPCVD deposited silicon dioxide is a high deposition rate, low temperature process (compared to thermally grown oxides).  Either silane or TEOS (Tetra EthOxy Silane or Tetra Ethyl OrthoSilicate) can be used as a precursor for SiO2. (teos2, thermcoLTO, tylanbpsg)

Equipment Tabs

Deposition Equipment
Partial words okay.
Deposition Equipment
Equipment name & Badger ID Cleanliness Location Material Thickness Range Approved Materials supplied by Lab
AJA Evaporator
aja-evap
SNF Exfab Paul G Allen 155A Venice
0.00 - 300.00 nm
Fiji 1 ALD
fiji1
SNF Cleanroom Paul G Allen L107
1.00 Å - 50.00 nm
Fiji 2 ALD
fiji2
SNF Cleanroom Paul G Allen L107
1.00 Å - 50.00 nm
Fiji 3 ALD
fiji3
SNF Cleanroom Paul G Allen L107
1.00 Å - 50.00 nm
Lesker Sputter
lesker-sputter
SNF Exfab Paul G Allen 155A Venice
Lesker2 Sputter
lesker2-sputter
SNF Cleanroom Paul G Allen L107
1.00 μm
PlasmaTherm Shuttlelock PECVD System
ccp-dep
SNF Cleanroom Paul G Allen L107
100.00 Å - 4.00 μm
PlasmaTherm Versaline HDP CVD System
hdpcvd
SNF Cleanroom Paul G Allen L107
500.00 Å - 4.00 μm
Teos SiO2 Deposition Furnace
teos2
SNF Cleanroom Paul G Allen L107
50.00 Å - 5.00 μm
Thermco LTO Deposition Furnace
thermcoLTO
SNF Cleanroom Paul G Allen L107
100.00 Å - 3.00 μm
TylanBPSG
tylanbpsg
SNF Cleanroom Paul G Allen L107
100.00 Å - 3.00 μm
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