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Germanium

Chemical Formula:

Ge

Germanium can be deposited in single crystal layers using the Epi or poly crystal layers using the LPCVD furnaces.

Equipment Tabs

Annealing & Oxidation Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Cleanroom Paul G Allen L107	50.00 Å - 3.00 μm	Ge Si SiGe

Deposition Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AJA Evaporator aja-evap	Flexible	SNF Exfab Paul G Allen 155A Venice	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti TiO₂
AJA2 Evaporator aja2-evap	Semiclean	SNF Cleanroom Paul G Allen L107	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Mo Nb Pd Pt Si Ta Ti V W Zr
AMAT Centurion Epitaxial System epi2	Clean	SNF Cleanroom Paul G Allen L107	50.00 Å - 3.00 μm	Ge Si SiGe
Innotec Evaporator Innotec	Flexible	SNF Cleanroom Paul G Allen L107		Ag Al Au Co Cr Cu Fe Ge In Mo Ni Pd Si Ta Ti W
Intlvac Evaporator Intlvac_evap	Clean Semiclean	SNF Cleanroom Paul G Allen L107	0.00 - 0.50 μm	Al Co Cr Ge Hf Mo Nb Ni Pd Si Ta Ti V W Zr
Lesker Sputter lesker-sputter	Flexible	SNF Exfab Paul G Allen 155A Venice		Ag Al Al₂O₃ AlSi Au Co Cr Cu Fe In_xSn_yO_z Nb Ni Pd Si SiO₂ Ta Ti TiN W
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Cleanroom Paul G Allen L107	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
ThermcoPoly2 thermcopoly2	Flexible	SNF Cleanroom Paul G Allen L107	100.00 Å - 3.00 μm	Ge Si SiGe

Etching Equipment

Etch Equipment
Equipment name & Badger ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Cleanroom Paul G Allen L107	Si	Ge SiGe
STS Deep RIE Etcher stsetch	Clean Semiclean	SNF Cleanroom Paul G Allen L107	Si	Ge SiGe
Xactix Xenon Difluoride Etcher xactix	All	SNF Cleanroom Paul G Allen L107	Ge Si SiGe

Projects