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CVD Equipment Summary

These tables contains all of the Chemical Vapor Deposition(CVD) Equipment, grouped by type of CVD.

CVD Equipment Summary

Plasma Enhanced (PE) ALD
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
Fiji 1 (fiji1) Semiclean
24 °C - 350 °C
1 Å - 50 nm
Fiji 2 (fiji2) Flexible
24 °C - 350 °C
1 Å - 50 nm
Fiji 3 (fiji3) Flexible
24 °C - 350 °C

Restricted to non-conductive films only

1 Å - 50 nm
Deposited III-N
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
Aix-ccs (aix-ccs) Clean (MOCVD) Special: See Notes 4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1...

0 - 5 μm
Deposited III-V
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
Aix200 (aix200) Flexible Pre-Diffusion Clean, Special: See Notes 4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or...

0 - 5 μm
Carbon Nanotube CVD Growth
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
First Nano carbon nanotube CVD furnace (cvd-nanotube) Flexible 1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF...

Graphene CVD Growth
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
Aixtron Black Magic graphene CVD furnace (aixtron-graphene) Flexible 1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Thermal ALD
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
MVD (mvd) Flexible
24 °C - 150 °C

Reactor located inside glovebox

1 Å - 50 nm
Savannah (savannah) Flexible
24 °C - 250 °C
1 Å - 50 nm
Deposited Single Crystal Silicon (LPCVD)
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
Epi2 (epi2) Clean Pre-Diffusion Clean
1
600 °C - 1200 °C

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

50 Å - 3 μm
ThermcoPoly1 (thermcopoly1) Clean Pre-Diffusion Clean 44
525 °C - 650 °C

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs...

100 Å - 3 μm
ThermcoPoly2 (thermcopoly2) Flexible Pre-Diffusion Clean 44
525 °C - 650 °C

Standard polysilicon deposition at 620C. P and N doping available.

100 Å - 3 μm
Deposited Oxide (PECVD)
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
PlasmaTherm Shuttlelock PECVD System (ccp-dep) All Special: See Notes
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to...

100 Å - 4 μm
PlasmaTherm Versaline HDP CVD System (hdpcvd) All Special: See Notes 1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to...

500 Å - 4 μm
Deposited Oxide (LPCVD)
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
ThermcoLTO (thermcoLTO) Flexible 26
300 °C - 450 °C

limits on material vapor pressure

100 Å - 3 μm
Teos2 (teos2) Clean Pre-Diffusion Clean
45
450 °C - 680 °C

Very conformal.

50 Å - 5 μm
TylanBPSG (tylanbpsg) Clean, Semiclean Pre-Diffusion Clean, Standard Metal Clean
26
300 °C - 450 °C
100 Å - 3 μm
Deposited Nitride (LPCVD)
Cleanliness Gases Cleaning Required Substrate Size Maximum Load Process Temperature Range Notes Material Thickness Range
ThermcoNitride (thermconitride1) Clean Pre-Diffusion Clean 44
785 °C - 850 °C

Stociometric and low stress (~150mPa) programs available

100 Å - 2 μm
Last modified: 30 Jan 2023