These tables contains all of the CVD (Chemical Vapor Deposition) Equipment available for use in the SNS labs. The tables are grouped by type of CVD.
If you would like to see a summary of CVD equipment grouped by material, please visit the materials page.
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Fiji 1 (fiji1) | Semiclean |
24 °C - 350 °C
|
1 Å -
50 nm
|
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Fiji 2 (fiji2) | Flexible |
24 °C - 350 °C
|
1 Å -
50 nm
|
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Fiji 3 (fiji3) | Flexible |
24 °C - 350 °C
|
Restricted to non-conductive films only |
1 Å -
50 nm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aix-ccs (aix-ccs) | Clean (MOCVD) | Special: See Notes | 4"x1, 2"X3, pieces |
400 °C - 1300 °C
|
N and P doping available. |
0 -
5 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aix200 (aix200) | Flexible | Pre-Diffusion Clean, Special: See Notes | 4"x1 wafer or 2"x1 wafer or 4 pieces |
300 °C - 800 °C
|
N and P doping available. |
0 -
5 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
First Nano carbon nanotube CVD furnace (cvd-nanotube) | Flexible | 1x4" wafer or multiple pieces |
800 °C - 1100 °C
|
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF... |
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aixtron Black Magic graphene CVD furnace (aixtron-graphene) | Flexible | 1x4" wafer or Copper/Nickel foil |
800 °C - 1100 °C
|
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
MVD (mvd) | Flexible |
24 °C - 150 °C
|
Reactor located inside glovebox |
1 Å -
50 nm
|
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Savannah (savannah) | Flexible |
24 °C - 250 °C
|
1 Å -
50 nm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Epi2 (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
50 Å -
3 μm
|
||
ThermcoPoly1 (thermcopoly1) | Clean | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs... |
100 Å -
3 μm
|
||
ThermcoPoly2 (thermcopoly2) | Flexible | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
Standard polysilicon deposition at 620C. P and N doping available. |
100 Å -
3 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
STS Plasma Enhanced CVD (sts) | Flexible | Four 4 inch or one 6 inch or one 8 inch |
350 ºC
|
100 Å -
5 μm
|
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PlasmaTherm Shuttlelock PECVD System (ccp-dep) | All | Special: See Notes | 4 |
100 °C - 350 °C
|
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to... |
100 Å -
4 μm
|
||
PlasmaTherm Versaline HDP CVD System (hdpcvd) | All | Special: See Notes | 1 |
50 °C - 150 °C
|
To maintain cleanliness level there are cleans required for both the chamber and wafers prior to... |
500 Å -
4 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
ThermcoLTO (thermcoLTO) | Flexible | 26 |
300 °C - 450 °C
|
limits on material vapor pressure |
100 Å -
3 μm
|
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Teos2 (teos2) | Clean | Pre-Diffusion Clean | 45 |
450 °C - 680 °C
|
Very conformal. |
50 Å -
5 μm
|
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TylanBPSG (tylanbpsg) | Clean, Semiclean | Pre-Diffusion Clean, Standard Metal Clean | 26 |
300 °C - 450 °C
|
100 Å -
3 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
ThermcoNitride (thermconitride1) | Clean | Pre-Diffusion Clean | 44 |
785 °C - 850 °C
|
Stociometric and low stress (~150mPa) programs available |
100 Å -
2 μm
|