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CVD Equipment Summary

These tables contains all of the Chemical Vapor Deposition(CVD) equipment, grouped by processing techniques.

CVD Equipment Summary

Plasma Enhanced (PE) ALD
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
Fiji 1 ALD (fiji1) Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
Fiji 2 ALD (fiji2) Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C
Fiji 3 ALD (fiji3) Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C

Restricted to non-conductive films only
Metal-Organic (MO) CVD
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
Aixtron MOCVD - III-N system (aix-ccs) Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1...

Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
Aixtron MOCVD - III-V system (aix200) Flexible
0.00 - 5.00 μm
Pre-Diffusion Clean
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or...

Carbon Nanotube CVD Growth
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
First Nano carbon nanotube CVD furnace (cvd-nanotube) Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF...

Graphene CVD Growth
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
Aixtron Black Magic graphene CVD furnace (aixtron-graphene) Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Thermal ALD
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
MVD (mvd) Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C

Reactor located inside glovebox
Savannah ALD (savannah) Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
EPI (CVD)
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
AMAT Centurion Epitaxial System (epi2) Clean
50.00 Å - 3.00 μm
Pre-Diffusion Clean
1
600 °C - 1200 °C

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Plasma Enhanced (PE) CVD
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
PlasmaTherm Shuttlelock PECVD System (ccp-dep) All
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to...

PlasmaTherm Versaline HDP CVD System (hdpcvd) All
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to...

Low Pressure (LP) CVD
Equipment Name Cleanliness Materials Lab Supplied Material Thickness Range Cleaning Required Substrate Size Maximum Load Process Temperature Range Gases Notes
Thermco LTO Deposition Furnace (thermcoLTO) Flexible
100.00 Å - 3.00 μm
26
300 °C - 450 °C

limits on material vapor pressure
Teos SiO2 Deposition Furnace (teos2) Clean
50.00 Å - 5.00 μm
Pre-Diffusion Clean
45
450 °C - 680 °C

Very conformal.
Thermco Nitride Deposition Furnace LPCVD (thermconitride1) Clean
100.00 Å - 2.00 μm
Pre-Diffusion Clean
44
785 °C - 850 °C

Stociometric and low stress (~150mPa) programs available
TylanBPSG (tylanbpsg) Clean, Semiclean
100.00 Å - 3.00 μm
Pre-Diffusion Clean, Standard Metal Clean
26
300 °C - 450 °C
ThermcoPoly1 (thermcopoly1) Clean
100.00 Å - 3.00 μm
Pre-Diffusion Clean
44
525 °C - 650 °C

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs...

ThermcoPoly2 (thermcopoly2) Flexible
100.00 Å - 3.00 μm
Pre-Diffusion Clean
44
525 °C - 650 °C

Standard polysilicon deposition at 620C. P and N doping available.
Last modified: 22 Feb 2023