These tables contains all of the Chemical Vapor Deposition(CVD) Equipment, grouped by type of CVD.
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Fiji 1 (fiji1) | Semiclean |
24 °C - 350 °C
|
1 Å -
50 nm
|
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Fiji 2 (fiji2) | Flexible |
24 °C - 350 °C
|
1 Å -
50 nm
|
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Fiji 3 (fiji3) | Flexible |
24 °C - 350 °C
|
Restricted to non-conductive films only |
1 Å -
50 nm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aix-ccs (aix-ccs) | Clean (MOCVD) | Special: See Notes | 4"x1, 2"X3, pieces |
400 °C - 1300 °C
|
N and P doping available. |
0 -
5 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aix200 (aix200) | Flexible | Pre-Diffusion Clean, Special: See Notes | 4"x1 wafer or 2"x1 wafer or 4 pieces |
300 °C - 800 °C
|
N and P doping available. |
0 -
5 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
First Nano carbon nanotube CVD furnace (cvd-nanotube) | Flexible | 1x4" wafer or multiple pieces |
800 °C - 1100 °C
|
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF... |
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Aixtron Black Magic graphene CVD furnace (aixtron-graphene) | Flexible | 1x4" wafer or Copper/Nickel foil |
800 °C - 1100 °C
|
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
MVD (mvd) | Flexible |
24 °C - 150 °C
|
Reactor located inside glovebox |
1 Å -
50 nm
|
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Savannah (savannah) | Flexible |
24 °C - 250 °C
|
1 Å -
50 nm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
Epi2 (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
50 Å -
3 μm
|
||
ThermcoPoly1 (thermcopoly1) | Clean | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs... |
100 Å -
3 μm
|
||
ThermcoPoly2 (thermcopoly2) | Flexible | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
Standard polysilicon deposition at 620C. P and N doping available. |
100 Å -
3 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
PlasmaTherm Shuttlelock PECVD System (ccp-dep) | All | Special: See Notes | 4 |
100 °C - 350 °C
|
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to... |
100 Å -
4 μm
|
||
PlasmaTherm Versaline HDP CVD System (hdpcvd) | All | Special: See Notes | 1 |
50 °C - 150 °C
|
To maintain cleanliness level there are cleans required for both the chamber and wafers prior to... |
500 Å -
4 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
ThermcoLTO (thermcoLTO) | Flexible | 26 |
300 °C - 450 °C
|
limits on material vapor pressure |
100 Å -
3 μm
|
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Teos2 (teos2) | Clean | Pre-Diffusion Clean | 45 |
450 °C - 680 °C
|
Very conformal. |
50 Å -
5 μm
|
||
TylanBPSG (tylanbpsg) | Clean, Semiclean | Pre-Diffusion Clean, Standard Metal Clean | 26 |
300 °C - 450 °C
|
100 Å -
3 μm
|
Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Notes | Material Thickness Range | |
---|---|---|---|---|---|---|---|---|
ThermcoNitride (thermconitride1) | Clean | Pre-Diffusion Clean | 44 |
785 °C - 850 °C
|
Stociometric and low stress (~150mPa) programs available |
100 Å -
2 μm
|