Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) is used for depositing thin (<50nm) films that are highly conformal. Most of the films deposited are metal oxides, although we do have Pt and Ru metal films available as well. We have both thermal only systems and plasma-assisted sytems available for labmembers to use.

A couple of useful links that help navigate ALD research in general (not specific to the SNF) are:

www.plasma-ald.com: a website created by Dr. Mark Sowa that has a survey of plasma ALD literature
www.atomiclimits.com: a website created by Professor Erwin Kessels, Eindhoven University, that provides a dynamic discussion of the ALD landscape.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system. Fiji2 is currently classified as Flexible and is open to a wide range of metals and dielectrics.	Flexible	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	The Fiji3 ALD system from Cambridge Nanotech/Ultratech is a plasma enabled atomic layer deposition system for deposition of restricted oxide films. The system is in the Flexible cleanliness category and allows a limited subset of gold contaminated substrates.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	MVD mvd	MVD is a molecular vapor deposition (MVD) system. It is a self assembling monolayers (SAMs)-based configuration of a Savannah S200 from Cambridge Nanotech with 1 SAMs delivery port and 4 standard atomic layer deposition (ALD) lines. The system can accommodate pieces up to an 8" wafer.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Process Temperature Range	Gases	Notes
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"	24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"	24 °C - 350 °C	Ar H₂ N₂ O₂
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	Flexible	SiO₂ Various Dielectrics Alumina Hafnia Titania	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"	24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Restricted to non-conductive films only
Thermal ALD	MVD mvd	Flexible	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"	24 °C - 150 °C	Ar	Reactor located inside glovebox
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"	24 °C - 250 °C	N₂

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Techniques

Atomic Layer Deposition (ALD)

Technique Tabs