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Aluminum and Titanium and Tungsten Wet Etching

Hydrogen peroxide mixtures are used for etching common CMOS metals like Al, Ti and W.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Aluminum and Titanium and Tungsten Wet Etching	Wet Bench CMOS Metal wbclean3	Wet bench part of semiclean cleanliness group to etch Al, Ti, W, or silicon oxide from 3, 4, or 6 inch wafers. The tanks can hold up to 25 wafers.	Semiclean	SNF Cleanroom Paul G Allen L107
Decontamination, Metal Clean, Piranha Cleaning, Wet Resist Removal, Acid or Base Wet Etching, Aluminum and Titanium and Tungsten Wet Etching, Silicon Wet Etching, Silicon Oxide Wet Etching	Wet Bench Flexcorr 1 wbflexcorr-1	Manual wet etching of non-standard materials using only SNF approved acids or bases. Hot plate available. GaAs allowed in personal labware only.	Flexible	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Chemicals	Primary Materials Etched	Other Materials Etched	Substrate Size	Maximum Load (number of wafers)	Notes
Aluminum and Titanium and Tungsten Wet Etching	Wet Bench CMOS Metal wbclean3	Semiclean	20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch	Al Ti W		3" 4" 6"	25 wafers	Al, Ti, or W wet etching or oxide etching
Decontamination, Metal Clean, Piranha Cleaning, Wet Resist Removal, Acid or Base Wet Etching, Aluminum and Titanium and Tungsten Wet Etching, Silicon Wet Etching, Silicon Oxide Wet Etching	Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	Acids Bases Gold Etchant H₃PO₄ 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W	Pieces 2" 3" 4" 6"		Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.