Dry Etch Equipment Summary
The tables in these sections are all of the etchers that are available in the SNF labs, sorted by etcher type. If you would like to learn about different types of dry etchers and how to chose your etcher, please visit the online dry etching course.
If you would like to see a summary of etchers for a specific material (i.e. SiO2 or poly silicon) please visit the materials page.
Dry Etch Equipment Summary
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Oxford III-V etcher (Ox-35) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8"... |
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| Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to... |
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| Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE) | Inductively Coupled Plasma Etching (ICP) | Flexible |
|
1 |
Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config;... |
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| Lam Research TCP 9400 Poly Etcher (lampoly) | Inductively Coupled Plasma Etching (ICP) | Clean, Semiclean | 25 |
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching... |
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| Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to... |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Plasmaetch PE-50 (plasma-etch) | Reactive Ion Etching (RIE) | Flexible |
|
Multiple |
Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At... |
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| MRC Reactive Ion Etcher (mrc) | Reactive Ion Etching (RIE) | Flexible | 1 |
Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be... |
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| Oxford Dielectric Etcher (oxford-rie) | Reactive Ion Etching (RIE) | Flexible | 1 |
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Gasonics Aura Asher (gasonics) | Downstream/Remote Plasma Resist Removal | Clean, Semiclean | 25 |
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for... |
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| Matrix Plasma Resist Strip (matrix) | Downstream/Remote Plasma Resist Removal | Flexible | 25 |
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for... |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Xactix Xenon Difluoride Etcher (xactix) | Vapor Etching | All |
|
1 |
Isotropic Si etching; can be used for backside Si removal on small pieces |
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| SPTS uetch vapor etch (uetch) | Vapor Etching | All |
|
1 |
Pieces need a carrier wafer; Isotropic Etching |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| AMAT P5000 Etcher (p5000etch) | Magnetically Enhanced RIE (MERIE) | Clean, Clean (Ge), Semiclean |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Technics Asher (technics) | Dry Resist Removal | Flexible | Four 4" wafers to pieces, one 6" or 8" wafer |
| Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
|---|---|---|---|---|---|---|---|---|
| Samco PC300 Plasma Etch System (samco) | Plasma Mode Etching | Flexible | Four 4" wafers or two 6" wafers and one 8" wafer |
Last modified: 4 May 2022
