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ICP Etchers

This is a summary of the ICP Etchers.

If you would like to see a summary of etchers for a specific material (i.e. SiOor poly silicon) please visit the materials page.

Dry Etch Equipment Summary

Processing Technique: Inductively Coupled Plasma Etching (ICP)
Equipment Name Processing Technique Cleanliness Primary Materials Etched Other Materials Etched Gases Substrate Size Maximum Load Notes
Oxford III-V etcher (Ox-35) Inductively Coupled Plasma Etching (ICP) Flexible
1

Metal etching or  Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8"...

Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL) Inductively Coupled Plasma Etching (ICP) Flexible
1

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to...

Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE) Inductively Coupled Plasma Etching (ICP) Flexible
1

Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config;...

Lam Research TCP 9400 Poly Etcher (lampoly) Inductively Coupled Plasma Etching (ICP) Clean, Semiclean
25

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching...

Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox) Inductively Coupled Plasma Etching (ICP) Flexible
1

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to...

Last modified: 30 Apr 2020