Oxford III-V etcher (Ox-35)
The Oxford III-V Etcher (Ox-35) is an inductively-coupled plasma (ICP) reactive ion etcher (RIE), designed for etching III-V semiconductors. The Oxford III-V Etcher is currently approved to etch GaAs, InGaAs, InAs, InP, InGaAsP, and GaP only.
Capabilities and Specifications
Primary Materials Etched
Primary Materials Etched:
Process Temperature Range:
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Lab Organization, Location, and Badger Information
Training and Maintenance
Steps to become a tool user
Check Training Calendar for any scheduled training
Read the relevant operating procedures before your training session.
Online training optional for background on plasma etching and choosing an etcher. Online Course
for general information about the online training. for general information about the Lagunita online training.
Go to Go to Online Nano Course Login
to log in directly to the course. to login directly to the course. Go to "nano@stanford" and then to the "Dry Etching" Section for the three videos on plasma etching principles and go to the "Choosing a Dry Etching Process" section for guidelines for choosing the right equipment.
Attend the training session to get qualified.