The Oxford III-V Etcher (Ox-35) is an inductively-coupled plasma (ICP) reactive ion etcher (RIE), designed for etching III-V semiconductors. The Oxford III-V Etcher is currently approved to etch GaAs, InGaAs, InAs, InP, InGaAsP, GaP and Si only.
Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Online Course for general information about the online training. Go to Online Nano Course Login to log in directly to the course.
Go to "nano@stanford" and then to the "Dry Etching" section for the three videos on plasma etching principles and to "Choosing a Dry Etching Process" section for guidelines for choosing the right equipment.