P5000 is a load-locked, magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is ainly uused for silicon etching with high slectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, upto 25 wafers can be loaded per batch. Note that transparent wafers can not be loaded in the automatic processing mode. P5000 is currently classified as CMOS restricted. Chamber A - Metal Etch Chamber - Not working Chamber B - Oxide Etch Chamber Chamber C - Poly Etch Chamber Note that all gases are not connected to all the chambers. For details refer to the operating instructions.