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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy. For more information please click here.

The following is a list of equipment that fall into the "Clean" category.

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Equipment name & Badger ID Training Required & Charges Cleanliness Lab Organization Location Notes
Aix-ccs
aix-ccs
Aixtron MOCVD - III-N system training Clean (MOCVD)
SNF
SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

AJA2 Evaporator
aja2-evap
AJA2 Evaporator Semiclean
SNF
SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

AMAT P5000 Etcher
p5000etch
AMAT P5000 Etcher Training Clean, Clean (Ge), Semiclean
SNF
SNF Cleanroom Paul G Allen L107
AMT Oxide Plasma Etcher
amtetcher
AMT Oxide Plasma Etcher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Batch processing tool with hexode configuration; pieces need to be mounted on a carrier wafer for etching

Aw610_l
aw610_l
AllWin 610 RTA Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Epi2
epi2
AMAT Centurion Epitaxial Training Clean
SNF
SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

Fiji 1
fiji1
Fiji 1 and 2 Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher
gasonics
Gasonics Aura Asher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.

Intlvac Evaporation
Intlvac_evap
Intlvac Evaporation Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107
Karl Suss Wafer Bonder
ksbonder
Karl Suss Wafer Bonder Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

Lesker2 Sputter
lesker2-sputter
Lesker2 Sputter Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

STS Deep RIE Etcher
stsetch
STS Deep RIE Etcher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching

Tencor P2 Profilometer
p2
Tencor P2 Profilometer Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm

Teos2
teos2
Teos Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Very conformal.

Thermco1
thermco1
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3
thermco 3
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

ThermcoNitride
thermconitride1
Thermco Nitride Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Stociometric and low stress (~150mPa) programs available

ThermcoPoly1
thermcopoly1
Thermco Poly Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.

TylanBPSG
tylanbpsg
TylanBPSG Deposition Furnace Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Pages

Equipment name & Badger ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Minimum Resolution Objective Separation Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aix-ccs
aix-ccs
Special: See Notes Clean (MOCVD)
0 - 5 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
AJA2 Evaporator
aja2-evap
Semiclean
0 - 300 nm
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
AMAT P5000 Etcher
p5000etch
Clean, Clean (Ge), Semiclean
AMT Oxide Plasma Etcher
amtetcher
Clean, Semiclean
24
Aw610_l
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
,
,
1 wafer
Epi2
epi2
Pre-Diffusion Clean Clean
50 Å - 3 μm
600 °C - 1200 °C
1
Fiji 1
fiji1
Semiclean
1 Å - 50 nm
24 °C - 350 °C
,
,
Gasonics Aura Asher
gasonics
Clean, Semiclean
25
Intlvac Evaporation
Intlvac_evap
Clean, Semiclean
0 - 1 μm
,
,
12 4 inch wafers, 2 6 inch wafers
Karl Suss Wafer Bonder
ksbonder
Clean
Lam Research TCP 9400 Poly Etcher
lampoly
Clean, Semiclean
,
25
Lesker2 Sputter
lesker2-sputter
Semiclean
1 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher
stsetch
Clean, Semiclean
1
Tencor P2 Profilometer
p2
Clean, Semiclean
,
,
,
,
,
,
,
,
1
Teos2
teos2
Pre-Diffusion Clean Clean
50 Å - 5 μm
450 °C - 680 °C
,
,
45
Thermco1
thermco1
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
,
,
50
Thermco3
thermco 3
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
50
ThermcoNitride
thermconitride1
Pre-Diffusion Clean Clean
100 Å - 2 μm
785 °C - 850 °C
44
ThermcoPoly1
thermcopoly1
Pre-Diffusion Clean Clean
100 Å - 3 μm
525 °C - 650 °C
,
,
44
TylanBPSG
tylanbpsg
Pre-Diffusion Clean, Standard Metal Clean Clean, Semiclean
100 Å - 3 μm
300 °C - 450 °C
,
,
26

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