Skip to content Skip to navigation

Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

Subscribe to
Equipment name & Badger ID Training Required & Charges Cleanliness Location Notes
Aixtron MOCVD - III-N system
aix-ccs
Aixtron MOCVD - III-N system training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

AJA2 Evaporator
aja2-evap
AJA2 Evaporator Semiclean SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

AllWin 610 RTA
aw610_l
AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
AMAT Centurion Epitaxial System
epi2
AMAT Centurion Epitaxial Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

AMAT P5000 Etcher
p5000etch
AMAT P5000 Etcher Training Clean, Clean (Ge), Semiclean SNF Cleanroom Paul G Allen L107
Fiji 1 ALD
fiji1
Fiji 1 and 2 ALD Training Semiclean SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher
gasonics
Gasonics Aura Asher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.

Intlvac Evaporation
Intlvac_evap
Intlvac Evaporation Training Clean, Semiclean SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

Lesker2 Sputter
lesker2-sputter
Lesker2 Sputter Training Semiclean SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

STS Deep RIE Etcher
stsetch
STS Deep RIE Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching

Tencor P2 Profilometer
p2
Tencor P2 Profilometer Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm

Teos SiO2 Deposition Furnace
teos2
Teos Deposition Furnace Training Clean SNF Cleanroom Paul G Allen L107

Very conformal.

Thermco Nitride Deposition Furnace LPCVD
thermconitride1
Thermco Nitride Deposition Furnace Training Clean SNF Cleanroom Paul G Allen L107

Stociometric and low stress (~150mPa) programs available

Thermco1 Oxidation Furnace
thermco1
Thermco Oxidation Furnaces Training Clean SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3 Oxidation Furnace
thermco 3
Thermco Oxidation Furnaces Training Clean SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

ThermcoPoly1
thermcopoly1
Thermco Poly Deposition Furnace Training Clean SNF Cleanroom Paul G Allen L107

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.

TylanBPSG
tylanbpsg
TylanBPSG Deposition Furnace Training Clean, Semiclean SNF Cleanroom Paul G Allen L107
Tylanfga Forming Gas Anneal Furnace
tylanfga
Forming Gas Anneal Furnace Training Semiclean SNF Cleanroom Paul G Allen L107

For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.

Wet Bench Clean 1
wbclean-1
Wet Bench Clean 1 and 2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Pages

Equipment name & Badger ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
AJA2 Evaporator
aja2-evap
Semiclean
0.00 - 300.00 nm
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
AllWin 610 RTA
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
,
,
1 wafer
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
AMAT P5000 Etcher
p5000etch
Clean, Clean (Ge), Semiclean
Fiji 1 ALD
fiji1
Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
,
,
Gasonics Aura Asher
gasonics
Clean, Semiclean
25
Intlvac Evaporation
Intlvac_evap
Clean, Semiclean
0.00 - 0.50 μm
,
,
12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher
lampoly
Clean, Semiclean
,
25
Lesker2 Sputter
lesker2-sputter
Semiclean
1.00 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher
stsetch
Clean, Semiclean
1
Tencor P2 Profilometer
p2
Clean, Semiclean ,
,
,
,
,
,
,
,
1
Teos SiO2 Deposition Furnace
teos2
Pre-Diffusion Clean Clean
50.00 Å - 5.00 μm
450 °C - 680 °C
,
,
45
Thermco Nitride Deposition Furnace LPCVD
thermconitride1
Pre-Diffusion Clean Clean
100.00 Å - 2.00 μm
785 °C - 850 °C
44
Thermco1 Oxidation Furnace
thermco1
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
700 °C - 1100 °C
,
,
50
Thermco3 Oxidation Furnace
thermco 3
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
700 °C - 1100 °C
50
ThermcoPoly1
thermcopoly1
Pre-Diffusion Clean Clean
100.00 Å - 3.00 μm
525 °C - 650 °C
,
,
44
TylanBPSG
tylanbpsg
Pre-Diffusion Clean, Standard Metal Clean Clean, Semiclean
100.00 Å - 3.00 μm
300 °C - 450 °C
,
,
26
Tylanfga Forming Gas Anneal Furnace
tylanfga
Standard Metal Clean Semiclean
100.00 Å - 100.00 Å
250 °C - 800 °C
50
Wet Bench Clean 1
wbclean-1
Clean
,
,
25

Pages