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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy. For more information please click here.

The following is a list of equipment that fall into the "Clean" category.

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
AJA2 Evaporator aja2-evap	AJA2 Evaporator	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AMAT P5000 Etcher p5000etch	AMAT P5000 Etcher Training	Clean, Clean (Ge), Semiclean	SNF	SNF Cleanroom Paul G Allen L107
AMT Oxide Plasma Etcher amtetcher	AMT Oxide Plasma Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Batch processing tool with hexode configuration; pieces need to be mounted on a carrier wafer for etching
Aw610_l aw610_l	AllWin 610 RTA Training	Clean	SNF	SNF Cleanroom Paul G Allen L107
Epi2 epi2	AMAT Centurion Epitaxial Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Fiji 1 fiji1	Fiji 1 and 2 Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Gasonics Aura Asher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Intlvac Evaporation Intlvac_evap	Intlvac Evaporation Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Karl Suss Wafer Bonder ksbonder	Karl Suss Wafer Bonder Training	Clean	SNF	SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Lesker2 Sputter lesker2-sputter	Lesker2 Sputter Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
STS Deep RIE Etcher stsetch	STS Deep RIE Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
Thermco1 thermco1	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoNitride thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)			0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN			400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean			0 - 300 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
AMAT P5000 Etcher p5000etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) > Magnetically Enhanced RIE (MERIE)		Clean, Clean (Ge), Semiclean	Si based materials Si SiGe SiN SiO₂ SiON Poly Silicon	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten						80% He/ 20%O₂ Ar CF₄ CHF₃ Cl₂ HBr He N₂ NF₃ O₂ SF₆
AMT Oxide Plasma Etcher amtetcher	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Clean, Semiclean	Si SiN SiO₂ Resist	C SiC SiON PI						Ar CHF₃ NF₃ O₂ SF₆	4"	(Si)	24
Aw610_l aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
Epi2 epi2	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping Deposition > Chemical Vapor Deposition (CVD) > Epi Annealing & Oxidation > Hydrogen (H2) Annealing	Pre-Diffusion Clean	Clean			50 Å - 3 μm	Ge Si SiGe Poly Silicon			600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
Fiji 1 fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean			1 Å - 50 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia			24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Clean, Semiclean	Resist	PI						O₂	4"	(Si)	25
Intlvac Evaporation Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Clean, Semiclean			0 - 1 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss Wafer Bonder ksbonder	Bonding		Clean
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si Poly Silicon	Ge SiGe						80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly			°C - 800 °C	Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher stsetch	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe						C₄F₈ O₂ SF₆	4"		1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean			50 Å - 5 μm	SiO₂			450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco1 thermco1	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂			700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
Thermco3 thermco 3	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂			700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
ThermcoNitride thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Nitride (LPCVD)	Pre-Diffusion Clean	Clean			100 Å - 2 μm	SiN			785 °C - 850 °C	N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean			100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
TylanBPSG tylanbpsg	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean			100 Å - 3 μm	SiO₂			300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26

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