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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
AJA2 Evaporator aja2-evap	AJA2 Evaporator	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AllWin 610 RTA aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
AMAT Centurion Epitaxial System epi2	AMAT Centurion Epitaxial Training	Clean	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
AMAT P5000 Etcher p5000etch	AMAT P5000 Etcher Training	Clean, Clean (Ge), Semiclean	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	Fiji 1 and 2 ALD Training	Semiclean	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Gasonics Aura Asher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Intlvac Evaporation Intlvac_evap	Intlvac Evaporation Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Lesker2 Sputter lesker2-sputter	Lesker2 Sputter Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
STS Deep RIE Etcher stsetch	STS Deep RIE Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Teos SiO2 Deposition Furnace teos2	Teos Deposition Furnace Training	Clean	SNF Cleanroom Paul G Allen L107	Very conformal.
Thermco Nitride Deposition Furnace LPCVD thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
Thermco1 Oxidation Furnace thermco1	Thermco Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 Oxidation Furnace thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Tylanfga Forming Gas Anneal Furnace tylanfga	Forming Gas Anneal Furnace Training	Semiclean	SNF Cleanroom Paul G Allen L107	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
Wet Bench Clean 1 wbclean-1	Wet Bench Clean 1 and 2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD		Clean (MOCVD)			0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean			0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
AllWin 610 RTA aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
AMAT Centurion Epitaxial System epi2	Doping Deposition > Chemical Vapor Deposition (CVD) > EPI (CVD) Annealing & Oxidation > Hydrogen (H2) Annealing Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	Pre-Diffusion Clean	Clean			50.00 Å - 3.00 μm	Ge Si SiGe	600 °C - 1200 °C		AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
AMAT P5000 Etcher p5000etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) > Magnetically Enhanced RIE (MERIE)		Clean, Clean (Ge), Semiclean	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten					80% He/ 20%O₂ Ar CF₄ CHF₃ Cl₂ HBr He N₂ NF₃ O₂ SF₆
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Clean, Semiclean	Resist	PI					O₂	4"	(Si)	25
Intlvac Evaporation Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe					80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	°C - 800 °C		Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher stsetch	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe					C₄F₈ O₂ SF₆	4"		1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Teos SiO2 Deposition Furnace teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			50.00 Å - 5.00 μm	SiO₂	450 °C - 680 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco Nitride Deposition Furnace LPCVD thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			100.00 Å - 2.00 μm	Si3N4	785 °C - 850 °C		N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
Thermco1 Oxidation Furnace thermco1	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
Thermco3 Oxidation Furnace thermco 3	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
ThermcoPoly1 thermcopoly1	Doping Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			100.00 Å - 3.00 μm	Ge Si SiGe	525 °C - 650 °C		B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
TylanBPSG tylanbpsg	Doping Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean			100.00 Å - 3.00 μm	SiO₂	300 °C - 450 °C		N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26
Tylanfga Forming Gas Anneal Furnace tylanfga	Annealing & Oxidation > Annealing (furnace)	Standard Metal Clean	Semiclean			100.00 Å - 100.00 Å		250 °C - 800 °C		10% H₂ in N₂ Ar N₂	Pieces 2" 3" 4"		50
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean						50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25

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