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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Location Notes
Aixtron MOCVD - III-N system
aix-ccs
MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

AJA2 Evaporator
aja2-evap
Evaporator AJA2 Semiclean SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

AMAT Centurion Epitaxial System
epi2
Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

AMAT P5000 Etcher
p5000etch
Dry Etcher AMAT P5000 Training Clean, Clean (Ge), Semiclean SNF Cleanroom Paul G Allen L107
Fiji 1 ALD
fiji1
ALD Fiji 1 and 2 Training Semiclean SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher
gasonics
Resist Removal Dry Gasonics Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.

Intlvac Evaporator
Intlvac_evap
Evaporator Intlvac Training Clean, Semiclean SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

Lesker2 Sputter
lesker2-sputter
Sputter Lesker 1&2 Training Semiclean SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer
p2
Tencor P2 Profilometer Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm

Thermco3 Oxidation Furnace
thermco 3
Thermco 3 Oxidation Furnaces Training Clean SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Tylanfga Forming Gas Anneal Furnace
tylanfga
Forming Gas Anneal Furnace Training Semiclean SNF Cleanroom Paul G Allen L107

For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Wet Bench Clean 2
wbclean-2
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha

Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist should have been removed

Wet Bench Clean_res-hf
wbclean_res-hf
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist as mask allowed

Wet Bench Clean_res-piranha
wbclean_res-piranha
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist will be removed

Wet Bench CMOS Metal
wbclean3
Wet Bench CMOS Metal (wbclean3) Training Semiclean SNF Cleanroom Paul G Allen L107

Al, Ti, or W wet etching or oxide etching

Wet Bench Decontamination
wbdecon
Wet Bench Decontamination Training Clean SNF Cleanroom Paul G Allen L107

KOH or wafersaw or post-cmp decontamination

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
AJA2 Evaporator
aja2-evap
Semiclean
0.00 - 300.00 nm
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
AMAT P5000 Etcher
p5000etch
Clean, Clean (Ge), Semiclean
Fiji 1 ALD
fiji1
Semiclean
1.00 Å - 50.00 nm
24 °C - 350 °C
,
,
Gasonics Aura Asher
gasonics
Clean, Semiclean
25
Intlvac Evaporator
Intlvac_evap
Clean, Semiclean
0.00 - 0.50 μm
,
,
12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher
lampoly
Clean, Semiclean
,
25
Lesker2 Sputter
lesker2-sputter
Semiclean
1.00 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
,
,
1 wafer
Tencor P2 Profilometer
p2
Clean, Semiclean ,
,
,
,
,
,
,
,
1
Thermco3 Oxidation Furnace
thermco 3
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
700 °C - 1100 °C
50
Tylanfga Forming Gas Anneal Furnace
tylanfga
Standard Metal Clean Semiclean
100.00 Å - 100.00 Å
250 °C - 800 °C
50
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,

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