Equipment name & Badger ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Materials User Supplied | Minimum Resolution | Exposure Wavelength | Resist | Objective Separation | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Resolution Notes | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Aixtron MOCVD - III-N system aix-ccs |
Clean (MOCVD) |
0 -
5 μm
|
|
|
400 °C - 1300 °C
|
, , , |
4"x1, 2"X3, pieces | ||||||||||||
AJA Evaporator aja-evap |
Flexible |
0 -
300 nm
|
|
|
|
, , , , , , , , , , , |
4"x3 or 6"x1 wafers or pieces | ||||||||||||
DISCO Wafer Saw DISCO wafersaw |
Flexible |
|
|
|
|
, , , , , , , , |
1x4", 1x6" or 1x8" wafer, or pieces | ||||||||||||
EV Group Wafer Bonder evbond |
Flexible |
|
|
|
|
, , , , , |
|||||||||||||
Fiji 2 ALD fiji2 |
Flexible |
1 Å -
50 nm
|
|
|
24 °C - 350 °C
|
, , , , , , , , , , , , |
|||||||||||||
Headway Manual Resist Spinner headway2 |
All |
|
|
|
|
, , , , , , , , , |
one piece or wafer | ||||||||||||
Heidelberg MLA 150 heidelberg |
All |
|
|
405 nm |
|
|
, , , , , , , , , , , , |
1 | |||||||||||
Heidelberg MLA 150 - 2 heidelberg2 |
All |
|
|
375 nm |
|
|
, , , , , , , , , , , , |
1 | |||||||||||
Lakeshore Hall Measurement System LakeshoreHall |
All |
100 μm -
1000 μm
|
|
|
-258 °C - 1000 °C
|
8 in wafer |
Sensor Transducer Size is 14 mm diameter |
, , , , , , , , , , |
1 piece | ||||||||||
LEI1500 Contactless Sheet Resistance Mapping eddycurrent |
All |
|
|
|
|
8 in wafer |
Sensor Transducer Size is 14 mm diameter |
, , , , , , , , , , , |
1 wafer(2" to 8") | ||||||||||
Lesker Sputter lesker-sputter |
Flexible |
|
|
|
|
, , , , , , , , , |
1 4 inch wafer, 1 6 inch wafer | ||||||||||||
Lesker2 Sputter lesker2-sputter |
Semiclean |
1 μm
|
|
|
°C - 800 °C
|
, , , , , , , , , |
one 4 inch wafer, one 6 inch wafer | ||||||||||||
micromanipulator6000 IV-CV probe station micromanipulator6000 |
All |
|
|
|
|
, , , , , , , , , , , |
1x4" wafer | ||||||||||||
Oven 110°C post-bake oven110 |
All |
|
|
|
110 ºC
|
, , , , , , , , , |
|||||||||||||
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible |
|
|
|
|
, , , , , , , , , , , , |
|||||||||||||
PlasmaTherm Shuttlelock PECVD System ccp-dep |
All |
100 Å -
4 μm
|
|
|
100 °C - 350 °C
|
, , , , , , , , |
4 | ||||||||||||
Samco PC300 Plasma Etch System samco |
Flexible |
|
|
|
20 ºC
|
, , , , , , , , , , , , , |
Four 4" wafers or two 6" wafers and one 8" wafer | ||||||||||||
Savannah ALD savannah |
Flexible |
1 Å -
50 nm
|
|
|
24 °C - 250 °C
|
, , , , , , , , , , , , |
|||||||||||||
SPTS uetch vapor etch uetch |
All |
|
|
|
|
, , , , , , , , , |
1 | ||||||||||||
Tousimis Automegasamdri-915B Critical Point Dryer cpd |
Flexible |
|
|
|
|
, , , , , , , , , |