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Silicon Carbide

Chemical Formula:

SiC

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
110°C Oven oven110	110°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
AJA Evaporator aja-evap	AJA Evaporation training	Flexible	SNF	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Critical Point Dryer cpd	Critical Point Dryer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
DISCO Wafer Saw DISCO wafersaw	DISCO wafersaw training	Flexible	SNF	SNF Exfab Paul G Allen 159 Capitola
EV Group Wafer Bonder evbond	EV Group Wafer Bonder Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Headway Manual Resist Spinner Training	All	SNF	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF	SNF Cleanroom Paul G Allen L107	Direct Write
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
Lesker Sputter lesker-sputter	Lesker Sputter Training	Flexible	SNF Exfab	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Lesker2 Sputter lesker2-sputter	Lesker2 Sputter Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF	SNF Exfab Paul G Allen 155 Mavericks
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Exposure Wavelength	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
110°C Oven oven110	Optical Photolithography > Resist Bake > Oven Bake > Post Bake		All										110 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)			0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN						400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄			Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0 - 300 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Alumina Titania											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
Critical Point Dryer cpd	Drying > CO2 Drying		Flexible											CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible															Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
EV Group Wafer Bonder evbond	Bonding		Flexible															Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Headway Manual Resist Spinner headway2	Optical Photolithography > Resist coat > Resist Coat (manual)		All								AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Optical Photolithography > Exposure > Direct Write		All							405 nm								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Optical Photolithography > Exposure > Direct Write		All							375 nm								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement		All			100 μm - 1000 μm							-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All													8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly						°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization		All															Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)											Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	Si based materials dimethylpolysiloxane Si SiN SiO₂ SiON Various polymers PI Poly Silicon								20 ºC		CF₄ O₂ SF₆			Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia						24 °C - 250 °C		N₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂											C₂H₅OH HF vapor			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Wet Bench Flexcorr 1 wbflexcorr-1	Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Etching > Wet Etching > Silicon Oxide Wet Etching Etching > Wet Etching > Silicon Wet Etching Cleaning > Resist Removal > Wet Resist Removal		Flexible	Al Au Cr Si SiO SiO₂ Resist										Acids Bases Gold Etchant PRS-1000 SRS-100 H₃PO₄ 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)

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