Metal-Organic (MO) CVD

MOCVD is a chemical vapour deposition method using metal organics to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures.

Equipment name & Badger ID	Materials Lab Supplied	Location	Link to Training
Aixtron MOCVD - III-N system aix-ccs	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	SNF MOCVD Paul G Allen 213XA	Aixtron MOCVD - III-N system training
Aixtron MOCVD - III-V system aix200	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	SNF MOCVD Paul G Allen 213XA	Aixtron MOCVD - III-V system training
Aixtron MOCVD - III-V system aix200	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	SNF MOCVD Paul G Allen 213XA	Aixtron MOCVD - III-V system training

Documentation

Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT
Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal
Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report
MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation
MOCVD Growth Calibration for GaN LED on Silicon- Final Report
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Report
White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’. This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.
White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’. This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.

Techniques

Metal-Organic (MO) CVD

Documentation

Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT

Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal

Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report

Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation

Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report

MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation

MOCVD Growth Calibration for GaN LED on Silicon- Final Report

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation

MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Report

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

Project

Community Service P-GaN/AlGAN/GaN E-mode HEMT

Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications

Epitaxy of GaAs on transferred CVD graphene

Improve the performance of MOCVD grown GaN-on-Si HEMT structure

InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

MOCVD Growth Calibration for GaN LED on Silicon

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMT)

P-GaN/AlGAN/GaN E-mode HEMT

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Metal-Organic (MO) CVD

Documentation

Project