Annealing & Oxidation

Annealing and Oxidation are processing techniques that are performed at high temperatures. Annealing is used to change the properties of a materials that are present on your sample. Oxidation done in furnaces grows the highest quality SiO₂ available in the SNF.

Technique Tabs

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Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Rapid Thermal Annealing	AllWin 610 RTA aw610_l		Clean	SNF Cleanroom Paul G Allen L107
Rapid Thermal Annealing	AllWin 610 RTA (aw610_r) aw610_r		Flexible	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco1 Oxidation Furnace thermco1		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco3 Oxidation Furnace thermco 3		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco4 Oxidation Furnace thermco4		Flexible	SNF Cleanroom Paul G Allen L107
Annealing (furnace)	Tylan9 Forming Gas Anneal Furnace tylan9		Flexible	SNF Cleanroom Paul G Allen L107
Annealing (furnace)	Tylanfga Forming Gas Anneal Furnace tylanfga		Semiclean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco1 Oxidation Furnace thermco1		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco3 Oxidation Furnace thermco 3		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Thermco4 Oxidation Furnace thermco4		Flexible	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Rapid Thermal Annealing	AllWin 610 RTA aw610_l	Clean			Pieces 2" 3" 4" 6"	1 wafer	21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pre-Diffusion Clean
Rapid Thermal Annealing	AllWin 610 RTA (aw610_r) aw610_r	Flexible			Pieces 2" 3" 4" 6"		21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Oxide Growth (furnace), Annealing (furnace)	Thermco1 Oxidation Furnace thermco1	Clean	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂	Pre-Diffusion Clean	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Oxide Growth (furnace), Annealing (furnace)	Thermco3 Oxidation Furnace thermco 3	Clean	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂	Pre-Diffusion Clean	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Oxide Growth (furnace), Annealing (furnace)	Thermco4 Oxidation Furnace thermco4	Flexible	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂		Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Annealing (furnace)	Tylan9 Forming Gas Anneal Furnace tylan9	Flexible	SiO₂		Pieces 2" 3" 4"	50	250 °C - 1100 °C	10% H₂ in N₂ Ar H₂ N₂ O₂		Any material that won't vaporize is okay. N2 and Ar annealing available.
Annealing (furnace)	Tylanfga Forming Gas Anneal Furnace tylanfga	Semiclean		100 Å - 100 Å	Pieces 2" 3" 4"	50	250 °C - 800 °C	10% H₂ in N₂ Ar N₂	Standard Metal Clean	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
Oxide Growth (furnace), Annealing (furnace)	Thermco1 Oxidation Furnace thermco1	Clean	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂	Pre-Diffusion Clean	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Oxide Growth (furnace), Annealing (furnace)	Thermco3 Oxidation Furnace thermco 3	Clean	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂	Pre-Diffusion Clean	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Oxide Growth (furnace), Annealing (furnace)	Thermco4 Oxidation Furnace thermco4	Flexible	SiO₂	25 Å - 2 μm	Pieces 2" 3" 4" 6"	50	700 °C - 1100 °C	H₂ N₂ O₂		Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

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Annealing & Oxidation

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