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Low Pressure (LP) CVD

Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	In the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100.00 Å - 3.00 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100.00 Å - 3.00 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.