Skip to content Skip to navigation

Low Pressure (LP) CVD

Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Equipment name & Badger ID	Location	Image	Overview	Materials Lab Supplied	Link to Training
Epi2 epi2	SNF Cleanroom Paul G Allen L107		Epi2 is the the first chamber on the tool and...	Ge Si SiGe Poly Silicon	AMAT Centurion Epitaxial Training
PlasmaTherm Versaline HDP CVD System hdpcvd	SNF Cleanroom Paul G Allen L107				PlasmaTherm Versaline HDP CVD System Training
Teos2 teos2	SNF Cleanroom Paul G Allen L107		Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl...	SiO₂	Teos Deposition Furnace Training
ThermcoLTO thermcoLTO	SNF Cleanroom Paul G Allen L107		Silicon dioxide (SiO2) is deposited at between 300 and 450C...	SiO₂	Thermco LTO Deposition Furnace Training
ThermcoNitride thermconitride1	SNF Cleanroom Paul G Allen L107		Silicon nitride (or nitride or Si3N4) is deposited at moderately...	SiN	Thermco Nitride Deposition Furnace Training
ThermcoPoly1 thermcopoly1	SNF Cleanroom Paul G Allen L107		Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at...	Ge Si SiGe Poly Silicon	Thermco Poly Deposition Furnace Training
ThermcoPoly2 thermcopoly2	SNF Cleanroom Paul G Allen L107		Same as ThermcoPoly1 but in the "flexible (gold-contaminated)" group. ...	Ge Si SiGe Poly Silicon	Thermco Poly Deposition Furnace Training
TylanBPSG tylanbpsg	SNF Cleanroom Paul G Allen L107		Silicon dioxide (SiO2) is deposited at between 300 and 450C...	SiO₂	TylanBPSG Deposition Furnace Training

Project

Documentation