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Low Pressure (LP) CVD

Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

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Equipment name & Badger ID Location Image Overview Materials Lab Supplied Link to Training
Epi2
epi2
SNF Cleanroom Paul G Allen L107
Applied Materials Centura Epi2  tool in SNF

Epi2 is the the first chamber on the tool and...

AMAT Centurion Epitaxial Training
PlasmaTherm Versaline HDP CVD System
hdpcvd
SNF Cleanroom Paul G Allen L107
PlasmaTherm Versaline HDP CVD System Training
Teos2
teos2
SNF Cleanroom Paul G Allen L107

Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl...

Teos Deposition Furnace Training
ThermcoLTO
thermcoLTO
SNF Cleanroom Paul G Allen L107

Silicon dioxide (SiO2) is deposited at between 300 and 450C...

Thermco LTO Deposition Furnace Training
ThermcoNitride
thermconitride1
SNF Cleanroom Paul G Allen L107

Silicon nitride (or nitride or Si3N4) is deposited at moderately...

Thermco Nitride Deposition Furnace Training
ThermcoPoly1
thermcopoly1
SNF Cleanroom Paul G Allen L107

Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at...

Thermco Poly Deposition Furnace Training
ThermcoPoly2
thermcopoly2
SNF Cleanroom Paul G Allen L107

Same as ThermcoPoly1 but in the "flexible (gold-contaminated)" group.  ...

Thermco Poly Deposition Furnace Training
TylanBPSG
tylanbpsg
SNF Cleanroom Paul G Allen L107

Silicon dioxide (SiO2) is deposited at between 300 and 450C...

TylanBPSG Deposition Furnace Training