Hydrogen (H2) Annealing is high temperature (600 to 1200c), high flow H2 (5 to 40 liters/minute) ambiant process to clean the oxide from a silicon wafer or to smooth the physical shape of a silicon structure on a wafer.
The temperture, gas flow and reduced pressure that this process requires can be met in an Epitaxial (Epi) reactor.
|Equipment name & Badger ID||Image||Cleanliness||Cleaning Required||Gases||Substrate Size||Process Temperature Range||Maximum Load (number of wafers)||Notes|
600 °C - 1200 °C
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr