Hydrogen (H2) Annealing is high temperature (600 to 1200c), high flow H2 (5 to 40 liters/minute) ambiant process to clean the oxide from a silicon wafer or to smooth the physical shape of a silicon structure on a wafer.
The temperture, gas flow and reduced pressure that this process requires can be met in an Epitaxial (Epi) reactor.
Processing Technique | Equipment name & Badger ID | Cleanliness | Materials Lab Supplied | Material Thickness Range | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Cleaning Required | Notes |
---|---|---|---|---|---|---|---|---|---|---|
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50 Å -
3 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
|||
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50 Å -
3 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
|||
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50 Å -
3 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
|||
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50 Å -
3 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
|||
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50 Å -
3 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |