More information is on the Processing Technique page for Pre-Diffusion Clean.
Following table is a list of all equipment which require a pre-diffusion clean.
Equipment name & Badger ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|
Aixtron MOCVD - III-V system aix200 |
Pre-Diffusion Clean | Flexible |
0.00 -
5.00 μm
|
300 °C - 800 °C
|
, , , |
4"x1 wafer or 2"x1 wafer or 4 pieces | ||||
AllWin 610 RTA aw610_l |
Pre-Diffusion Clean | Clean |
21 °C - 1150 °C
|
, , |
1 wafer | |||||
AMAT Centurion Epitaxial System epi2 |
Pre-Diffusion Clean | Clean |
50.00 Å -
3.00 μm
|
600 °C - 1200 °C
|
1 | |||||
Teos SiO2 Deposition Furnace teos2 |
Pre-Diffusion Clean | Clean |
50.00 Å -
5.00 μm
|
450 °C - 680 °C
|
, , |
45 | ||||
Thermco Nitride Deposition Furnace LPCVD thermconitride1 |
Pre-Diffusion Clean | Clean |
100.00 Å -
2.00 μm
|
785 °C - 850 °C
|
44 | |||||
Thermco1 Oxidation Furnace thermco1 |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
700 °C - 1100 °C
|
, , |
50 | ||||
Thermco3 Oxidation Furnace thermco 3 |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
700 °C - 1100 °C
|
50 | |||||
ThermcoPoly1 thermcopoly1 |
Pre-Diffusion Clean | Clean |
100.00 Å -
3.00 μm
|
525 °C - 650 °C
|
, , |
44 | ||||
ThermcoPoly2 thermcopoly2 |
Pre-Diffusion Clean | Flexible |
100.00 Å -
3.00 μm
|
525 °C - 650 °C
|
44 | |||||
TylanBPSG tylanbpsg |
Pre-Diffusion Clean, Standard Metal Clean | Clean, Semiclean |
100.00 Å -
3.00 μm
|
300 °C - 450 °C
|
, , |
26 |