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Pre-Diffusion Clean

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Equipment name & Badger ID Training Required & Charges Cleanliness Lab Organization Location Notes
Aix200
aix200 		Aixtron MOCVD - III-V system training Flexible
SNF
SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.
Aw610_l
aw610_l 		AllWin 610 RTA Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Epi2
epi2 		AMAT Centurion Epitaxial Training Clean
SNF
SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Teos2
teos2 		Teos Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Very conformal.
Thermco1
thermco1 		Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3
thermco 3 		Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoNitride
thermconitride1 		Thermco Nitride Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Stociometric and low stress (~150mPa) programs available
ThermcoPoly1
thermcopoly1 		Thermco Poly Deposition Furnace Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2
thermcopoly2 		Thermco Poly Deposition Furnace Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Standard polysilicon deposition at 620C. P and N doping available.
TylanBPSG
tylanbpsg 		TylanBPSG Deposition Furnace Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107
Equipment name & Badger ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Minimum Resolution Objective Separation Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aix200
aix200
Pre-Diffusion Clean, Special: See Notes Flexible
0 - 5 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces
Aw610_l
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
Epi2
epi2
Pre-Diffusion Clean Clean
50 Å - 3 μm
600 °C - 1200 °C
1
Teos2
teos2
Pre-Diffusion Clean Clean
50 Å - 5 μm
450 °C - 680 °C
(Si)
,
(SiGe)
,
(SiO2)
 45
Thermco1
thermco1
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Thermco3
thermco 3
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
50
ThermcoNitride
thermconitride1
Pre-Diffusion Clean Clean
100 Å - 2 μm
785 °C - 850 °C
(Si)
 44
ThermcoPoly1
thermcopoly1
Pre-Diffusion Clean Clean
100 Å - 3 μm
525 °C - 650 °C
(Si)
,
(SiGe)
,
(SiO2)
 44
ThermcoPoly2
thermcopoly2
Pre-Diffusion Clean Flexible
100 Å - 3 μm
525 °C - 650 °C
44
TylanBPSG
tylanbpsg
Pre-Diffusion Clean, Standard Metal Clean Clean, Semiclean
100 Å - 3 μm
300 °C - 450 °C
(Si)
,
(SiGe)
,
(SiO2)
 26