Rapid Thermal Annealing

Rapid Thermal Annealing (RTA or RTP) is a heated process perfomeded in an Rapid Thermal Annealer to can change material properties of a sample. Anneal parameters include temperature, ramp time, anneal time, ambient gas. Gernerally anneal times range from seconds to 30 minutes.

Because of the small chamber size and quartz lamps, the RTA can heat and cool much quicker than a furnace but can accommodate fewer samples.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Rapid Thermal Annealing	AllWin 610 RTA aw610_l		Clean	SNF Cleanroom Paul G Allen L107
Rapid Thermal Annealing	AllWin 610 RTA (aw610_r) aw610_r		Flexible	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required
Rapid Thermal Annealing	AllWin 610 RTA aw610_l	Clean	Pieces 2" 3" 4" 6"	1 wafer	21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pre-Diffusion Clean
Rapid Thermal Annealing	AllWin 610 RTA (aw610_r) aw610_r	Flexible	Pieces 2" 3" 4" 6"		21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂

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Techniques

Rapid Thermal Annealing

Technique Tabs