Skip to content Skip to navigation

Doping

Doping is a technique that introduces impurities into materials in order to change it's properties.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100 Å - 3 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100 Å - 3 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100 Å - 3 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100 Å - 3 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean