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Silicon Germanium

Chemical Formula:

SiGe

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist will be removed
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or resist removal.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe					80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂			4"	(Si) , (SiGe)	25
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All								8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly		°C - 800 °C	Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Flexible	Resist	PI					O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization		All										Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry		All										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake		Flexible						0 °C - 200 °C				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake		All						110 ºC				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake		All						90 ºC				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake		Flexible						0 °C - 430 °C				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Si3N4 SiC SiO₂ PI	C					Ar CF₄ CHF₃ N₂ O₂ SF₆			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)						Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		All			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON		100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (LiNb)	4
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All										2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean						21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible						21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI				20 ºC	CF₄ O₂ SF₆			Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer

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