Skip to content Skip to navigation

Silicon

Chemical Formula:

Si

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
Aixtron MOCVD - III-N system aix-ccs	MOCVD - III-N Aixtron training	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aixtron MOCVD - III-V system aix200	MOCVD - III-V Aixtron training	Flexible	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Aixtron Black Magic graphene CVD furnace aixtron-graphene	CVD graphene furnace Aixtron Black Magic training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
AJA Evaporator aja-evap	Evaporator AJA training	Flexible	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Lesker Sputter lesker-sputter	Sputter Lesker 1&2 Training	Flexible	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
DISCO Wafer Saw DISCO wafersaw	Wafersaw DISCO training	Flexible	SNF Exfab Paul G Allen 159 Capitola
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF Exfab Paul G Allen 151 Ocean
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF Exfab Paul G Allen 151 Ocean
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible				C						800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD		Clean (MOCVD)			0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN						400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aixtron MOCVD - III-V system aix200	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean	Flexible			0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN						300 °C - 800 °C		H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean			0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper		All						365 nm	5 inch						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Drying > CO2 Drying		Flexible											CO₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible													Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)		All									Resists				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner		All						350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
EVG Wafer Bonder evbond	Bonding		Flexible													Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible			1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Finetech Lambda flipchipbonder	Bonding		Flexible										°C - 400 °C			Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth		Flexible				CNT						800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement		All													3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Clean, Semiclean	Resist	PI										O₂	4"	(Si)	25
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)		All									AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write		All						405 nm							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1

Pages