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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Aixtron Black Magic graphene CVD furnace training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aixtron MOCVD - III-V system aix200	Aixtron MOCVD - III-V system training	Flexible	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
AJA Evaporator aja-evap	AJA Evaporation training	Flexible	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AJA2 Evaporator aja2-evap	AJA2 Evaporator	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AMAT Centurion Epitaxial System epi2	AMAT Centurion Epitaxial Training	Clean	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
ASML PAS 5500/60 i-line Stepper asml	ASML PAS 5500/60 i-line Stepper Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
Contact Aligner Karl Suss MA-6 1 karlsuss	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Contact Aligner Karl Suss MA-6 2 karlsuss2	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
DISCO Wafer Saw DISCO wafersaw	DISCO wafersaw training	Flexible	SNF Exfab Paul G Allen 159 Capitola
EV Group Contact Aligner evalign	EV Group Contact Aligner Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
EV Group Wafer Bonder evbond	EV Group Wafer Bonder Training	Flexible	SNF Cleanroom Paul G Allen L107
EVG 101 Spray Coater evgspraycoat	EVG 101 Spray Coater Training	All	SNF Cleanroom Paul G Allen L107	Spray coating of resists
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Fiji 1 ALD fiji1	Fiji 1 and 2 ALD Training	Semiclean	SNF Cleanroom Paul G Allen L107
Fiji 2 ALD fiji2	Fiji 1 and 2 ALD Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 3 ALD fiji3	Fiji 3 ALD Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible		C							800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD		Clean (MOCVD)	0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN							400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aixtron MOCVD - III-V system aix200	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean	Flexible	0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN							300 °C - 800 °C		H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
AMAT Centurion Epitaxial System epi2	Doping Deposition > Chemical Vapor Deposition (CVD) > EPI (CVD) Annealing & Oxidation > Hydrogen (H2) Annealing Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	Pre-Diffusion Clean	Clean	50.00 Å - 3.00 μm	Ge Si SiGe							600 °C - 1200 °C		AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper		All				365 nm	5 inch							4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
Contact Aligner Karl Suss MA-6 1 karlsuss	Photolithography > Exposure > Contact Aligner		All				365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Contact Aligner Karl Suss MA-6 2 karlsuss2	Photolithography > Exposure > Contact Aligner		All				365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible												Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
EV Group Contact Aligner evalign	Photolithography > Exposure > Contact Aligner		All				350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
EV Group Wafer Bonder evbond	Bonding		Flexible												Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)		All							Resists					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual)		Flexible								AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Other
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning		Flexible										Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia							24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia							24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania							24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Finetech Lambda flipchipbonder	Bonding		Flexible									°C - 400 °C			Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth		Flexible		CNT							800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces

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