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Semiclean

The "Semiclean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Semiclean" category.

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Location	Notes
AJA2 Evaporator aja2-evap	AJA2 Evaporator	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AMAT P5000 Etcher p5000etch	AMAT P5000 Etcher Training	Clean, Clean (Ge), Semiclean	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	Fiji 1 and 2 ALD Training	Semiclean	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Gasonics Aura Asher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Intlvac Evaporation Intlvac_evap	Intlvac Evaporation Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Lesker2 Sputter lesker2-sputter	Lesker2 Sputter Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
STS Deep RIE Etcher stsetch	STS Deep RIE Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Tylanfga Forming Gas Anneal Furnace tylanfga	Forming Gas Anneal Furnace Training	Semiclean	SNF Cleanroom Paul G Allen L107	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
Wet Bench CMOS Metal (wbclean3) wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF Cleanroom Paul G Allen L107	Wet Resist Removal: SRS-100 or PRS1000

Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean			0 - 300 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
AMAT P5000 Etcher p5000etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) > Magnetically Enhanced RIE (MERIE)		Clean, Clean (Ge), Semiclean	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten							80% He/ 20%O₂ Ar CF₄ CHF₃ Cl₂ HBr He N₂ NF₃ O₂ SF₆
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean			1 Å - 50 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia			24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Clean, Semiclean	Resist	PI							O₂	4"	(Si)	25
Intlvac Evaporation Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Clean, Semiclean			0 - 1 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe							80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly			°C - 800 °C		Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher stsetch	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe							C₄F₈ O₂ SF₆	4"		1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
TylanBPSG tylanbpsg	Doping Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean			100 Å - 3 μm	SiO₂			300 °C - 450 °C		N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26
Tylanfga Forming Gas Anneal Furnace tylanfga	Annealing & Oxidation > Annealing (furnace)	Standard Metal Clean	Semiclean			100 Å - 100 Å				250 °C - 800 °C		10% H₂ in N₂ Ar N₂	Pieces 2" 3" 4"		50
Wet Bench CMOS Metal (wbclean3) wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching		Semiclean	Al Ti W							20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Resist Strip wbresstrip-1	Cleaning > Resist Removal > Wet Resist Removal		Clean (Ge), Semiclean, Flexible	Resist						20 °C - 60 °C	PRS-1000 SRS-100		Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC)	25 4 inch wafers