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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	All	SNF	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different Cleanliness
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Sinton Lifetime Tester sinton-lifetime-tester	Sinton Lifetime Tester Training	Flexible	SNF	SNF Exfab Paul G Allen 151 Ocean
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
STS Deep RIE Etcher stsetch	STS Deep RIE Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
STS Plasma Enhanced CVD sts	STS Plasma Enhanced CVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Technics Asher technics	Technics Asher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
Thermco1 thermco1	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco4 thermco4	Thermco Oxidation Furnaces Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Resist	Developer	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Polysilicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD)	Special: See Notes	All			500 Å - 4 μm						50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄	Pieces 4"		1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All											2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	Si based materials dimethylpolysiloxane Si SiN SiO₂ SiON Various polymers PI Poly Silicon							20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia					24 °C - 250 °C	N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible											Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂									C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
STS Deep RIE Etcher stsetch	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe								C₄F₈ O₂ SF₆	4"		1
STS Plasma Enhanced CVD sts	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD)		Flexible			100 Å - 5 μm						350 ºC	2% SiH₄ in N₂ N₂ NH₃ O₂	Pieces 4" 6" 8"		Four 4 inch or one 6 inch or one 8 inch
SVG Develop Track 1 svgdev	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All							MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All							MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Optical Photolithography > Resist coat > Resist Coat (automatic)		All						Shipley 3612 resist SPR220-3 resist SPR220-7					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Optical Photolithography > Resist coat > Resist Coat (automatic)		All						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI								O₂	Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean			50 Å - 5 μm	SiO₂					450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco1 thermco1	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂					700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
Thermco3 thermco 3	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂					700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
Thermco4 thermco4	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth		Flexible			25 Å - 2 μm	SiO₂					700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible			100 Å - 3 μm	SiO₂					300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26

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