2 inch wafer

Short Name:

The following is a list of equipment where 2 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Lesker Sputter lesker-sputter	Sputter Lesker 1&2 Training	Flexible	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF Exfab Paul G Allen 151 Ocean
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	All	SNF Cleanroom Paul G Allen L107	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	All	SNF Exfab Paul G Allen 104 Stinson
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF Cleanroom Paul G Allen L107	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Cleanroom Paul G Allen L107	Direct Write
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	All	SNF Exfab Paul G Allen 104 Stinson
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
EVG Wafer Bonder evbond	Wafer Bonder EVG Training	Flexible	SNF Cleanroom Paul G Allen L107
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.

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Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible		Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All							Resists SU-8 LOL			(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All				365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All				365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean	0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All									150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All				375 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All				405 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All							AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	All							Resists Shipley 3612 resist SPR220-3 resist SPR220-7							Pieces 2" 3" 4"		1 piece or wafer
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT							800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂			Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania							24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia							24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia							24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning	Flexible										Solvents				Pieces 2" 3" 4" 6" 8" Other
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual)	Flexible								AZ 1:1 MF-26A developer						Pieces 2" 3" 4" 6" 8" 12" Other
EVG Wafer Bonder evbond	Bonding	Flexible														Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner	All				350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer