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4 inch wafer

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4"
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Equipment name & Badger IDsort descending Training Required & Charges Cleanliness Lab Organization Location Notes
Laurell Manual Resist Spinner
laurell-R
Laurell Manual Resist Spinner Training All
SNF
SNF Cleanroom Paul G Allen L107

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 

LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training All
SNF
SNF Exfab Paul G Allen 151 Ocean
Lesker Sputter
lesker-sputter
Lesker Sputter Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Lesker2 Sputter
lesker2-sputter
Lesker2 Sputter Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Lithography Solvent Bench
lithosolv
Lithography Solvent Bench Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.

Matrix Plasma Resist Strip
matrix
Matrix Plasma Resist Strip Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All
SNF
SNF Exfab Paul G Allen 151 Ocean
MRC Reactive Ion Etcher
mrc
MRC Reactive Ion Etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

MVD
mvd
MVD Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Reactor located inside glovebox

Nanospec 210XP
nanospec2
Nanospec Training All
SNF
SNF Exfab Paul G Allen 104 Stinson

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

Nanospec 3
nanospec3
Nanospec 3 Training Flexible
SNF
SNF Cleanroom Paul G Allen L107
Optomec Printer
optomec-printer
Optomec Printer Training Flexible
SNF
SNF Exfab Paul G Allen 155A Venice
Oxford Dielectric Etcher
oxford-rie
Oxford Dielectric Etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

Oxford III-V etcher
Ox-35
Oxford III-V etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.

PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater
Parylene Coater Training Flexible
SNF
SNF Exfab Paul G Allen 155 Mavericks
Plasma Therm Versaline LL ICP Deep Silicon Etcher
PT-DSE
Plasma Therm Versaline LL ICP Deep Silicon Etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL
Plasma Therm Versaline LL ICP Metal Etcher Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Plasmaetch PE-50
plasma-etch
Plasmaetch PE-50 Training Flexible
SNF
SNF Exfab Paul G Allen 155 Mavericks

Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab

PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All
SNF
SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

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Equipment name & Badger IDsort descending Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Materials User Supplied Minimum Resolution Resist Objective Separation Process Temperature Range Chemicals Gases Sample Size Limits Resolution Notes Substrate Size Substrate Type Maximum Load
Laurell Manual Resist Spinner
laurell-R
All
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
All
8 in wafer

Sensor Transducer Size is 14 mm diameter 

,
,
,
,
,
,
,
,
,
,
,
1 wafer(2" to 8")
Lesker Sputter
lesker-sputter
Flexible
,
,
,
,
,
,
,
,
,
1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter
lesker2-sputter
Semiclean
1 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer
Lithography Solvent Bench
lithosolv
Flexible
,
,
,
,
,
,
,
,
Matrix Plasma Resist Strip
matrix
Flexible
,
,
,
,
25
micromanipulator6000 IV-CV probe station
micromanipulator6000
All
,
,
,
,
,
,
,
,
,
,
,
1x4" wafer
MRC Reactive Ion Etcher
mrc
Flexible
1
MVD
mvd
Flexible
1 Å - 50 nm
24 °C - 150 °C
Nanospec 210XP
nanospec2
All
,
,
,
,
,
,
,
,
Nanospec 3
nanospec3
Flexible
Optomec Printer
optomec-printer
Flexible
Oxford Dielectric Etcher
oxford-rie
Flexible
,
,
,
,
1
Oxford III-V etcher
Ox-35
Flexible
1
PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater
Flexible
,
,
,
,
,
,
,
,
,
,
,
,
Plasma Therm Versaline LL ICP Deep Silicon Etcher
PT-DSE
Flexible
1
Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Flexible
1
Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL
Flexible
1
Plasmaetch PE-50
plasma-etch
Flexible
Multiple
PlasmaTherm Shuttlelock PECVD System
ccp-dep
Special: See Notes All
100 Å - 4 μm
100 °C - 350 °C
4

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