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Sapphire

Chemical Formula:

Al₂O₃

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Profilometer AlphaStep D-300 alphastep2	AlphaStep2 Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	All	SNF Exfab Paul G Allen 104 Stinson
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or resist removal.
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
AJA2 Evaporator aja2-evap	Evaporator AJA2	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces
EVG Wafer Bonder evbond	Wafer Bonder EVG Training	Flexible	SNF Cleanroom Paul G Allen L107

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Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Clean (MOCVD)	0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN						400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄			Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Semiclean	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper	All				365 nm	5 inch								4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Drying > CO2 Drying	Flexible									CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible													Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	All							Resists						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner	All				350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
EVG Wafer Bonder evbond	Bonding	Flexible													Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Finetech Lambda flipchipbonder	Bonding	Flexible								°C - 400 °C					Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge)	1
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	All													3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All							AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All				405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All				375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All								150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All				365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All				365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All													Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	All	100.00 μm - 1000.00 μm							-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece

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