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Lithium Niobate

Chemical Formula:

LiNb

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
EV Group Wafer Bonder evbond	EV Group Wafer Bonder Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF	SNF Cleanroom Paul G Allen L107	Direct Write
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF	SNF Exfab Paul G Allen 155 Mavericks
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Woollam woollam	Woollam Training	All	SNF	SNF Cleanroom Paul G Allen L107

Equipment name & Badger ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
EV Group Wafer Bonder evbond	Bonding	Flexible										Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia				24 °C - 350 °C	Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Heidelberg MLA 150 heidelberg	Optical Photolithography > Exposure > Direct Write	All						405 nm				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Optical Photolithography > Exposure > Direct Write	All						375 nm				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All										Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible				poly(p-xylylene)						Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Resist	Si based materials dimethylpolysiloxane Si SiN SiO₂ SiON Various polymers PI Poly Silicon						20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia				24 °C - 250 °C	N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Woollam woollam	Characterization > Ellipsometry	All										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	1