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III-V

Chemical Formula:

III-V

Compound materials with chemical elements from the III and V groups of the periodic table.

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
110°C Oven oven110	110°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
90°C Oven oven90	90°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Aix200 aix200	Aixtron MOCVD - III-V system training	Flexible	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
AJA Evaporator aja-evap	AJA Evaporation training	Flexible	SNF	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Alphastep 500 Profilometer alphastep	Alphastep 500 Profilometer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	500Å to 300µm
Blue M Oven bluem	Blue M Oven Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
Critical Point Dryer cpd	Critical Point Dryer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
DISCO Wafer Saw DISCO wafersaw	DISCO wafersaw training	Flexible	SNF	SNF Exfab Paul G Allen 159 Capitola
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 3 fiji3	Fiji 3 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Flexus 2320 Stress Tester stresstest	Flexus 2320 Stress Tester Training	All	SNF	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Headway Manual Resist Spinner Training	All	SNF	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF	SNF Cleanroom Paul G Allen L107	Direct Write
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Karl Suss MA-6 Contact Aligner 1 karlsuss	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Keyence Digital Microscope VHX-6000 keyence	Keyence Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
110°C Oven oven110	Optical Photolithography > Resist Bake > Oven Bake > Post Bake		All									110 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
90°C Oven oven90	Optical Photolithography > Resist Bake > Oven Bake > Prebake		All									90 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Aix200 aix200	Deposition > Deposited III-V Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean, Special: See Notes	Flexible	0 - 5 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN							300 °C - 800 °C		H₂ MO sources N₂ SiH₄			Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible	0 - 300 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
Alphastep 500 Profilometer alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Blue M Oven bluem	Optical Photolithography > Resist Bake > Oven Bake		Flexible									0 °C - 430 °C					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Critical Point Dryer cpd	Drying > CO2 Drying		Flexible										CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible														Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia							24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania							24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement		All														3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway Manual Resist Spinner headway2	Optical Photolithography > Resist coat > Resist Coat (manual)		All							AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Optical Photolithography > Exposure > Direct Write		All				405 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Optical Photolithography > Exposure > Direct Write		All				375 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Optical Photolithography > Wafer preparation before resist > Singe Optical Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)		All									150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Karl Suss MA-6 Contact Aligner 1 karlsuss	Optical Photolithography > Exposure > Contact Aligner		All				365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Optical Photolithography > Exposure > Contact Aligner		All				365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy		All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement		All	100 μm - 1000 μm								-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")

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