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Gallium Nitride

Chemical Formula:

GaN

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
110°C Oven oven110	110°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
90°C Oven oven90	90°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
AJA Evaporator aja-evap	AJA Evaporation training	Flexible	SNF	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Alphastep 500 Profilometer alphastep	Alphastep 500 Profilometer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	500Å to 300µm
Blue M Oven bluem	Blue M Oven Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
Critical Point Dryer cpd	Critical Point Dryer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
DISCO Wafer Saw DISCO wafersaw	DISCO wafersaw training	Flexible	SNF	SNF Exfab Paul G Allen 159 Capitola
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Flexus 2320 Stress Tester stresstest	Flexus 2320 Stress Tester Training	All	SNF	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Headway Manual Resist Spinner Training	All	SNF	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF	SNF Cleanroom Paul G Allen L107	Direct Write
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Karl Suss MA-6 Contact Aligner 1 karlsuss	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Keyence Digital Microscope VHX-6000 keyence	Keyence Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
Lesker Sputter lesker-sputter	Lesker Sputter Training	Flexible	SNF Exfab	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
110°C Oven oven110	Optical Photolithography > Resist Bake > Oven Bake > Post Bake		All										110 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
90°C Oven oven90	Optical Photolithography > Resist Bake > Oven Bake > Prebake		All										90 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)	0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN								400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄			Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible	0 - 300 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Alumina Titania													Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
Alphastep 500 Profilometer alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Blue M Oven bluem	Optical Photolithography > Resist Bake > Oven Bake		Flexible										0 °C - 430 °C					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Critical Point Dryer cpd	Drying > CO2 Drying		Flexible											CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible															Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia								24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement		All															3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway Manual Resist Spinner headway2	Optical Photolithography > Resist coat > Resist Coat (manual)		All								AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Optical Photolithography > Exposure > Direct Write		All					405 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Optical Photolithography > Exposure > Direct Write		All					375 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Optical Photolithography > Wafer preparation before resist > Singe Optical Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)		All										150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Karl Suss MA-6 Contact Aligner 1 karlsuss	Optical Photolithography > Exposure > Contact Aligner		All					365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Optical Photolithography > Exposure > Contact Aligner		All					365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization		All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement		All	100 μm - 1000 μm									-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All													8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible		Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer

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