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Silicon Carbide

Chemical Formula: 
SiC
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Equipment name & NEMO ID Training Required & Chargessort ascending Cleanliness Location Notes
SPTS uetch vapor etch
uetch
SPTS uetch vapor etch Training All SNF Cleanroom Paul G Allen L107

Pieces need a carrier wafer; Isotropic Etching

PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
Woollam
woollam
Woollam Training All SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Critical Point Dryer Tousimis Automegasamdri-915B
cpd
Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices

Oven 110°C post-bake
oven110
Resist Postbake Oven 110°C Training All SNF Cleanroom Paul G Allen L107

Bakes wafers with resist after the development, called post-bake.

Aixtron MOCVD - III-N system
aix-ccs
MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Savannah ALD
savannah
ALD Savannah Training Flexible SNF Cleanroom Paul G Allen L107
Fiji 2 ALD
fiji2
ALD Fiji 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

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Equipment name & NEMO ID Technique Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Process Temperature Range Chemicals Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer ,
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SPTS uetch vapor etch
uetch
All ,
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1
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
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Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
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Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
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Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
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Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
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Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
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Wet Bench Resist Strip
wbresstrip-1
Clean (Ge), Semiclean, Flexible
20 °C - 60 °C
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25 4 inch wafers
Woollam
woollam
All ,
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1
Xactix Xenon Difluoride Etcher
xactix
All ,
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1

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