MOCVD Equipment Summary

Processing Technique		Cleanliness	Gases	Cleaning Required	Substrate Size	Maximum Load	Process Temperature Range	Material Thickness Range	Notes
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system (aix-ccs)	Clean (MOCVD)	H₂ MO sources N₂ NH₃ SiH₄		Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	0.00 - 5.00 μm	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1...
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system (aix200)	Flexible	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	Pieces 2" 3" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	0.00 - 5.00 μm	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or...

Last modified: 30 Apr 2020