LPCVD Equipment Summary
This is a summary of the Low Pressure Chemical Vapor Deposition (LPCVD) equipment.
LPCVD Equipment Summary
| Processing Technique | Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Material Thickness Range | Notes | |
|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD | AMAT Centurion Epitaxial System (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
50.00 Å -
3.00 μm
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
| Low Pressure (LP) CVD, Doping | Thermco LTO Deposition Furnace (thermcoLTO) | Flexible | 26 |
300 °C - 450 °C
|
100.00 Å -
3.00 μm
|
limits on material vapor pressure |
|||
| Low Pressure (LP) CVD | Teos SiO2 Deposition Furnace (teos2) | Clean | Pre-Diffusion Clean | 45 |
450 °C - 680 °C
|
50.00 Å -
5.00 μm
|
Very conformal. |
||
| Low Pressure (LP) CVD | Thermco Nitride Deposition Furnace LPCVD (thermconitride1) | Clean | Pre-Diffusion Clean | 44 |
785 °C - 850 °C
|
100.00 Å -
2.00 μm
|
Stociometric and low stress (~150mPa) programs available |
||
| Low Pressure (LP) CVD, Doping | TylanBPSG (tylanbpsg) | Clean, Semiclean | Pre-Diffusion Clean, Standard Metal Clean | 26 |
300 °C - 450 °C
|
100.00 Å -
3.00 μm
|
|||
| Low Pressure (LP) CVD, Doping | ThermcoPoly1 (thermcopoly1) | Clean | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
100.00 Å -
3.00 μm
|
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs... |
||
| Low Pressure (LP) CVD, Doping | ThermcoPoly2 (thermcopoly2) | Flexible | Pre-Diffusion Clean | 44 |
525 °C - 650 °C
|
100.00 Å -
3.00 μm
|
Standard polysilicon deposition at 620C. P and N doping available. |
Last modified: 30 Jan 2023
