LPCVD Equipment Summary
This is a summary of the Low Pressure Chemical Vapor Deposition (LPCVD) equipment.
LPCVD Equipment Summary
| Processing Technique | Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Material Thickness Range | Notes | |
|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD | AMAT Centurion Epitaxial System (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
50.00 Å -
3.00 μm
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
Last modified: 30 Jan 2023
