Aixtron MOCVD - III-N system (aix-ccs)
Overview
Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in general but is a clean MOCVD so only accepts clean substrates. The system has been well calibrated for 4-inch wafer, while pieces and 2-inch wafer are available too.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Lab Supplied Materials
Material Thickness Range: 0.0 - 5.0 μm
Process Temperature Range:
400 °C - 1300 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
4"x1, 2"X3, pieces
Notes:
N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Lab Organization, Location, and NEMO Information
Lab Organization:
Location:
NEMO Area:
MOCVD
NEMO ID:
aix-ccs
Training and Maintenance
Lab Facility:
Training Charges:
4.00 hours
Backup Trainer(s):
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
