4 inch wafer

Short Name:

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Cleanroom Paul G Allen L107	Direct Write
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Technics Asher technics	Technics Asher Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Wet Bench Miscellaneous wbmiscres	Wet Bench Miscellaneous Photoresist Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI										O₂			4"	(Si)	25
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	All									Resists Shipley 3612 resist SPR220-3 resist SPR220-7						Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All									AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All						405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All						375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All										150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All						365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe										80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂			4"	(Si) , (SiGe)	25
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All									Resists SU-8 LOL		(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All													8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly						°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI										O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All															Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metals Various Dielectrics	Metal oxides PI										Ar CHClF₂ CHF₃ O₂ SF₆			Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS						24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry	All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)