2 inch wafer

Short Name:

The following is a list of equipment where 2 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	All	SNF Exfab Paul G Allen 104 Stinson
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Profilometer AlphaStep D-300 alphastep2	AlphaStep2 Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	All	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Tylan9 Forming Gas Anneal Furnace tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Cleanroom Paul G Allen L107
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	All	SNF Cleanroom Paul G Allen L107	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
EVG Wafer Bonder evbond	Wafer Bonder EVG Training	Flexible	SNF Cleanroom Paul G Allen L107

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible		C						800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD		Clean (MOCVD)	0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN						400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aixtron MOCVD - III-V system aix200	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean	Flexible	0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN						300 °C - 800 °C		H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
Asylum AFM afm-asylum	Characterization > Surface Analysis > Profilometer > Atomic Force Microscopy (AFM)		Flexible											Pieces 2" 3"
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Drying > CO2 Drying		Flexible									CO₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible											Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)		All						Resists					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner		All			350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
EVG Wafer Bonder evbond	Bonding		Flexible											Pieces 2" 3" 4"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (LiNb)
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual)		Flexible							AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Other
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning		Flexible									Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth		Flexible		CNT						800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)		All						Resists Shipley 3612 resist SPR220-3 resist SPR220-7					Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)		All						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write		All			405 nm								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1