8 inch wafer

Short Name:

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Technics Asher technics	Technics Asher Training	Flexible	SNF Cleanroom Paul G Allen L107
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
MVD mvd	MVD Training	Flexible	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF Exfab Paul G Allen 151 Ocean
Flexus 2320 Stress Tester stresstest	Stress Tester Flexus 2320 Training	All	SNF Cleanroom Paul G Allen L107
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
DISCO Wafer Saw DISCO wafersaw	Wafersaw DISCO training	Flexible	SNF Exfab Paul G Allen 159 Capitola

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Woollam woollam	Characterization > Ellipsometry	All											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile	Clean, Semiclean											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal	Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI						O₂			Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
SPTS uetch vapor etch uetch	Etching > Vapor Etching	All	SiO₂							C₂H₅OH HF vapor			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer	All											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia		24 °C - 250 °C		N₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI				20 ºC		CF₄ O₂ SF₆			Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement	All											2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible				poly(p-xylylene)							Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS		24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All									8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	All											3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania		24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia		24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia		24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning	Flexible							Solvents				Pieces 2" 3" 4" 6" 8" Other
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual)	Flexible					AZ 1:1 MF-26A developer						Pieces 2" 3" 4" 6" 8" 12" Other
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible											Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces