Pieces

Short Name:

Pieces

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Wet Bench Flexible Solvents 2 wbflexsolv-2	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning, hot plate
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
MVD mvd	MVD Training	Flexible	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
Nanospec 3 nanospec3	Nanospec 3 Training	All	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Thermco3 Oxidation Furnace thermco 3	Thermco 3 Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or resist removal.
Tylanfga Forming Gas Anneal Furnace tylanfga	Forming Gas Anneal Furnace Training	Semiclean	SNF Cleanroom Paul G Allen L107	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Tylan9 Forming Gas Anneal Furnace tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Cleanroom Paul G Allen L107
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF Exfab Paul G Allen 151 Ocean
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake		All					90 ºC			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 430 °C			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)				Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist					78% N₂, 21% O₂, ~1% Ar		Pieces 2" 3" 4" 6"		Multiple
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		All			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (LiNb)	4
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		All			500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		Pieces 4"		1
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible					21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC	CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	24 °C - 250 °C	N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy		All			0.00 mm - 35.00 mm				6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible								Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂					C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI				O₂		Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Thermco3 Oxidation Furnace thermco 3	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C	H₂ N₂ O₂		Pieces 2" 3" 4" 6"		50
Tylan9 Forming Gas Anneal Furnace tylan9	Annealing & Oxidation > Annealing (furnace)		Flexible				SiO₂	250 °C - 1100 °C	10% H₂ in N₂ Ar H₂ N₂ O₂		Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2)	50