Pieces

Short Name:

Pieces

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
Nanospec 3 nanospec3	Nanospec 3 Training	All	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Thermco3 Oxidation Furnace thermco 3	Thermco 3 Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or resist removal.
Tylanfga Forming Gas Anneal Furnace tylanfga	Forming Gas Anneal Furnace Training	Semiclean	SNF Cleanroom Paul G Allen L107	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Tylan9 Forming Gas Anneal Furnace tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	All	SNF Cleanroom Paul G Allen L107	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Cleanroom Paul G Allen L107	Direct Write
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

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Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Accessories Available	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All						405 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All						375 nm										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All										150 ºC	[(CH₃)₃Si]₂NH					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All						365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All																Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	All			100.00 μm - 1000.00 μm							-258 °C - 1000 °C			8 in wafer		Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All									Resists SU-8 LOL		(C₅O₂H₈)_n					Pieces 2" 3" 4" 6"
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly						°C - 800 °C		Ar N₂ O₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Malvern Dynamic Light Scattering (DLS) Zetasizer malvern-dls	Characterization > Dynamic Light Scattering	Flexible														Integrating Sphere		Pieces Other
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All																Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metals Various Dielectrics	Metal oxides PI										Ar CHClF₂ CHF₃ O₂ SF₆				Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS						24 °C - 150 °C		Ar				Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry	All																Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry	All																Pieces 2" 3" 4" 6"
Optomec Printer optomec-printer	Deposition > Ink	Flexible																Pieces 2" 3" 4" 6"
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake	Flexible										0 °C - 200 °C						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake	All										110 ºC						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)