Skip to content Skip to navigation

Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

Subscribe to
Equipment name & NEMO IDsort ascending Training Required & Charges Cleanliness Location Notes
AMAT P5000 Etcher
p5000etch 		Dry Etcher AMAT P5000 Training Clean, Clean (Ge), Semiclean SNF Cleanroom Paul G Allen L107
AMAT Centurion Epitaxial System
epi2 		Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
AJA2 Evaporator
aja2-evap 		Evaporator AJA2 Semiclean SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Aixtron MOCVD - III-N system
aix-ccs 		MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Pages

Equipment name & NEMO IDsort ascending Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
AMAT P5000 Etcher
p5000etch
Clean, Clean (Ge), Semiclean
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
AJA2 Evaporator
aja2-evap
Semiclean
0.00 - 300.00 nm
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(Ge)
,
(Various)
 4"x3 or 6"x1 wafers or pieces
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
(Si)
,
(Al2O3)
,
(SiC)
,
(GaN)
 4"x1, 2"X3, pieces

Pages