Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker2 Sputter lesker2-sputter		Semiclean	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Cleanroom Paul G Allen L107
Evaporation	AJA2 Evaporator aja2-evap	This E-beam evaporator can evaporate a variety of semi-clean materials onto your substrates. It is equipped with an ion gun for precleaning samples.	Semiclean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl orthosilicate (TEOS) which can provide a more conformal coating at lower temperature than tylanbpsg films. This is a six inch tube.	Clean	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3).	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	All	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system. Fiji2 is currently classified as Flexible and is open to a wide range of metals and dielectrics.	Flexible	SNF Cleanroom Paul G Allen L107
Evaporation	Innotec Evaporator Innotec		Flexible	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	The Fiji3 ALD system from Cambridge Nanotech/Ultratech is a plasma enabled atomic layer deposition system for deposition of restricted oxide films. The system is in the Flexible cleanliness category and allows a limited subset of gold contaminated substrates.	Flexible	SNF Cleanroom Paul G Allen L107
Evaporation	Intlvac Evaporation Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Thermal ALD	MVD mvd	MVD is a molecular vapor deposition (MVD) system. It is a self assembling monolayers (SAMs)-based configuration of a Savannah S200 from Cambridge Nanotech with 1 SAMs delivery port and 4 standard atomic layer deposition (ALD) lines. The system can accommodate pieces up to an 8" wafer.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean
Evaporation	AJA Evaporator aja-evap		Flexible	SNF Exfab Paul G Allen 155A Venice

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Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1 Å - 50 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1 Å - 50 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ O₂
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	Flexible	SiO₂ Various Dielectrics Alumina Hafnia Titania	1 Å - 50 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂		Restricted to non-conductive films only
Thermal ALD	MVD mvd	Flexible	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	1 Å - 50 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 150 °C	Ar		Reactor located inside glovebox
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1 Å - 50 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Clean	SiO₂	50 Å - 5 μm	4" 6"	45	450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean	Very conformal.
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100 Å - 3 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Clean	Si3N4	100 Å - 2 μm	Pieces 2" 3" 4" 6"	44	785 °C - 850 °C	N₂ NH₃ DCS	Pre-Diffusion Clean	Stociometric and low stress (~150mPa) programs available
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100 Å - 3 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	All	Si Si3N4 SiC SiO₂ SiON	100 Å - 4 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	All	Si Si3N4 SiC SiO₂ SiON	500 Å - 4 μm	Pieces 4"	1	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	0 - 5 μm	Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄		N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200	Flexible	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	0 - 5 μm	Pieces 2" 3" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"

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Deposition

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