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Gallium Arsenide

Chemical Formula: 
GaAs
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Equipment name & NEMO IDsort ascending Training Required & Charges Cleanliness Location Notes
DISCO Wafer Saw
DISCO wafersaw 		Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Critical Point Dryer Tousimis Automegasamdri-915B
cpd 		Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices
AJA Evaporator
aja-evap 		Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Aixtron MOCVD - III-V system
aix200 		MOCVD - III-V Aixtron training Flexible SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

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Equipment name & NEMO IDsort ascending Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
DISCO Wafer Saw
DISCO wafersaw
Flexible
(Si)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
 1x4", 1x6" or 1x8" wafer, or pieces
Critical Point Dryer Tousimis Automegasamdri-915B
cpd
Flexible
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
AJA Evaporator
aja-evap
Flexible
0.00 - 300.00 nm
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
 4"x3 or 6"x1 wafers or pieces
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces

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