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MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures

Project Type: 
E241
Date: 
June 2018
Areas of Interest: 
MOCVD regrowth, patterned in cleanroom and then return to MOCVD tools
Report(s): 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report
Researchers and (Mentors): 
Savannah Bennbrook, Yanni Dahmani, (Xiaoqing Xu)
List of Important Equipment: 
Aixtron MOCVD - III-N system (aix-ccs)
Oxford Dielectric Etcher (oxford-rie)
Oxford III-V etcher (Ox-35)
Presentation(s): 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures
Runsheet(s): 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures Runsheet