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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Tylanfga Forming Gas Anneal Furnace tylanfga	Forming Gas Anneal Furnace Training	Semiclean	SNF Cleanroom Paul G Allen L107	For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Aixtron MOCVD - III-N system aix-ccs	MOCVD - III-N Aixtron training	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.

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Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Process Temperature Range	Chemicals	Substrate Size	Substrate Type	Maximum Load
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Cleaning > Resist Removal > Wet Resist Removal	Clean			9:1 Piranha	3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching	Semiclean	Al Ti W		20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch	3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination	Clean			SC2	3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Resist Strip wbresstrip-1	Cleaning > Resist Removal > Wet Resist Removal	Clean (Ge), Semiclean, Flexible	Resist	20 °C - 60 °C	PRS-1000 SRS-100	Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC)	25 4 inch wafers

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