Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.
Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
No equipment matches all of the filter criteria you have set above. Especially make sure only Main Purpose OnlyORFull Purpose has something in it other than "- Any -"—they do not play well with each other!
The first attempt to grow wafer-scale, single crystal monolayer graphene on a Ge(110) substrate is documented here. The advantage of Ge over the current extablished Cu growth is that there is only one preferred orientation, allowing formation of a continuous, single-crystal sheet and dry transfer is easily completed which introduces fewer potential contaminants and allows for reuse of the substrate material.