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Developing Etching Process for Nanostructures on InGaP and AlInP Using OX-35 Etcher
Project Type:
E241
Date:
June 2014
Areas of Interest:
InGaP and AlInP etching
Report(s):
Developing Etching Process for Nanostructures on InGaP and AlInP Using OX-35 Etcher- Final Report
Processing Technique (former Function and Method):
Dry Etching
Researchers and (Mentors):
Jieyang Jia, Li Zhao, (Mary Tang), (Jim McVittie)
List of Important Equipment:
Oxford III-V etcher (Ox-35)
Presentation(s):
Developing Etching Process for Nanostructures on InGaP and AlInP Using OX-35 Etcher- Final Presentation
Materials
Aluminum Indium Phosphide (AlInP)
Indium Gallium Phosphide (InGaP)