All

The "All" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "All" category.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF Exfab Paul G Allen 104 Stinson	Direct Write
HMDS Vapor Prime Oven, YES2 yes2	Exfab YES2 HMDS oven training	All	SNF Exfab Paul G Allen 104 Stinson	Singe and prime. No Resist allowed!
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	All	SNF Exfab Paul G Allen 104 Stinson
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	All	SNF Exfab Paul G Allen 104 Stinson
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Reflectance Spectrometer Filmetrics F40 filmetrics	Reflectance Spectrometer Filmetrics F40 Training	All	SNF Cleanroom Paul G Allen L107
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Mask Scrubber masksrub	Mask Scrubber Training	All	SNF Cleanroom Paul G Allen L107	5 inch mask cleaning, water under pressure, no chemicals
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper	All		365 nm	5 inch								4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	All					Resists						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner	All		350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	All											3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	All					Resists Shipley 3612 resist SPR220-3 resist SPR220-7						Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All		405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All		375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All							150 ºC	[(CH₃)₃Si]₂NH			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
HMDS Vapor Prime Oven, YES2 yes2	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All						[(CH₃)₃Si]₂NH	150 ºC						25
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All		365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All		365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	All	100.00 μm - 1000.00 μm						-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All					Resists SU-8 LOL			(C₅O₂H₈)_n			Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All									8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Mask Scrubber masksrub	Photolithography > Mask Cleaning (manual)	All			5 inch					DI Water
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All											Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry	All											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry	All											Pieces 2" 3" 4" 6"